Thermal Evaporation of Large-Area SnS2 Thin Films with a UV-to-NIR Photoelectric Response for Flexible Photodetector Applications

2020 ◽  
Vol 12 (22) ◽  
pp. 24940-24950 ◽  
Author(s):  
Yan Lei ◽  
Jie Luo ◽  
Xiaogang Yang ◽  
Tuo Cai ◽  
Ruijuan Qi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Large Area ◽  
Photoelectric Response ◽  
Flexible Photodetector

scholarly journals Highly Uniform Large-Area (100 cm2) Perovskite CH3NH3PbI3 Thin-Films Prepared by Single-Source Thermal Evaporation

Coatings ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 256 ◽  
Author(s):  
Guangxing Liang ◽  
Huabin Lan ◽  
Ping Fan ◽  
Chunfeng Lan ◽  
Zhuanghao Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Thermal Evaporation ◽  
Perovskite Solar Cell ◽  
Stoichiometric Ratio ◽  
Single Source ◽  
Large Area ◽  
Highly Uniform ◽  
The Ideal

In this work, we report the reproducible preparation method of highly uniform large-area perovskite CH3NH3PbI3 thin films by scalable single-source thermal evaporation with the area of 100 cm2. The microstructural and optical properties of large-area CH3NH3PbI3 thin films were investigated. The dense, uniform, smooth, high crystallinity of large-area perovskite thin film was obtained. The element ratio of Pb/I was close to the ideal stoichiometric ratio of CH3NH3PbI3 thin film. These films show a favorable bandgap of 1.58 eV, long and balanced carrier-diffusion lengths. The CH3NH3PbI3 thin film perovskite solar cell shows a stable efficiency of 7.73% with almost no hysteresis, indicating a single-source thermal evaporation that is suitable for a large area perovskite solar cell.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Synthesis of N-CNT/TiO2 composites thin films: surface analysis and optoelectronic properties

2020 ◽  
Vol 183 ◽  
pp. 05002 ◽  
Author(s):  
Hamza Belkhanchi ◽  
Younes Ziat ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
Abdelaziz Moutcine ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Analysis ◽  
Sol Gel ◽  
Careful Analysis ◽  
Optoelectronic Properties ◽  
Spectroscopic Techniques ◽  
Large Area ◽  
Visible Absorption ◽  
Temperature Solution ◽  
Good Agreement

In this study, we have investigated the surface analysis and optoelectronic properties on the synthesis of N-CNT/TiO2 composites thin films, using sol gel method for a dye synthetized solar cell (DSSC) which is found to be simple and economical route. The titanium dioxide based solar cells are an exciting photovoltaic candidate; they are promising for the realization of large area devices. That can be synthetized by room temperature solution processing, with high photoactive performance. In the present work, we stated comparable efficiencies by directing our investigation on obtaining Sol Gel thin films based on N-CNT/TiO2, by dispersing nitrogen (N) doped carbon nanotubes (N-CNTs) powders in titanium tetraisopropoxyde (TTIP). The samples were assessed in terms of optical properties, using UV—visible absorption spectroscopic techniques. After careful analysis of the results, we have concluded that the mentioned route is good and more efficient in terms of optoelectronic properties. The gap of “the neat” 0.00w% N-CNT/TiO2 is of 3eV, which is in a good agreement with similar gap of semiconductors. The incorporated “w%NCNTs” led to diminishing the Eg with increasing N-CNTs amount. These consequences are very encouraging for optoelectronic field.

scholarly journals From radical to triradical thin film processes: the Blatter radical derivatives

2021 ◽  
Author(s):  
Arrigo Calzolari ◽  
Andrzej Rajca ◽  
Maria Benedetta Casu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Evaporation ◽  
Controlled Environment

We demonstrate the possibility to evaporate Blatter radical derivatives in a controlled environment obtaining thin films that preserve the (poly)radical magnetic character. However, their thermal evaporation is challenging. We analyse...

scholarly journals Strong texture tuning along different crystalline directions in glass-supported CeO2 thin films by ultrasonic spray pyrolysis

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Inti Zumeta-Dubé ◽  
José Manuel García Rangel ◽  
Jorge Roque ◽  
Issis Claudette Romero-Ibarra ◽  
Mario Fidel García Sánchez
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Morphological Characteristics ◽  
Ultrasonic Spray Pyrolysis ◽  
Cost Effective ◽  
Growth Direction ◽  
Large Area ◽  
Smart Windows ◽  
Ultrasonic Spray

AbstractThe strong facet-dependent performance of glass-supported CeO2 thin films in different applications (catalysis, smart windows, etc.) has been the target of diverse fundamental and technological approaches. However, the design of accurate, cost-effective and scalable methods with the potential for large-area coverage that produce highly textured glass-supported CeO2 thin films remains a technological challenge. In the present work, it is demonstrated that under proper tuning conditions, the ultrasonic spray pyrolysis technique enables one to obtain glass-supported polycrystalline CeO2 films with noticeable texture along both the (100) and (111) directions, as well as with randomly oriented crystallites (no texture). The influence of flow rates, solution molarity, and substrate temperature on the texture and morphological characteristics, as well as optical absorption and Raman response of the deposited films, is evaluated. The obtained results are discussed on the basis of the combined dependence of the CeO2-exposed surfaces on the thermodynamic stability of the corresponding facets and the reaction kinetics, which modulate the crystallite growth direction.

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