A Novel Metal Precursor Structure for Electrodepositing Ultrathin CIGSe Thin-Film Solar Cell with High Efficiency

2020 ◽  
Vol 12 (21) ◽  
pp. 24403-24410
Author(s):  
Qing Gao ◽  
Jianping Ao ◽  
Jinlian Bi ◽  
Liyong Yao ◽  
Zhaojing Zhang ◽  
...  
Author(s):  
F. Bonnín-Ripoll ◽  
Ya. B. Martynov ◽  
R. G. Nazmitdinov ◽  
G. Cardona ◽  
R. Pujol-Nadal

A thorough optical + electrical + Lambertian scattering analysis determines the optimal thickness of a perovskite thin-film solar cell revealing its high efficiency with inorganic HTMs.


2011 ◽  
Vol 109 (8) ◽  
pp. 084306 ◽  
Author(s):  
Fei Wang ◽  
Hongyu Yu ◽  
Junshuai Li ◽  
Shemein Wong ◽  
Xiao Wei Sun ◽  
...  

Author(s):  
Mohammad Hossein Pourdadash ◽  
Veeraiyah Thangasamy ◽  
Jacqueline Lukose ◽  
Mohammadreza Aghaei ◽  
Ajmal Hussain Shah

2015 ◽  
Vol 31 (2) ◽  
pp. 891-896 ◽  
Author(s):  
Masoud Sabaghi ◽  
Abbas Majdabadi ◽  
Saeid Marjani ◽  
Saeed Khosroabadi

2005 ◽  
Vol 865 ◽  
Author(s):  
Tokio Nakada ◽  
Keiichiro Yamada ◽  
Ryota Arai ◽  
Hiroki Ishizaki ◽  
Naoomi Yamada

AbstractAg(In1-xGax)Se2 thin films have been deposited on Mo-coated soda-lime glass substrates by the three-stage process using a molecular beam epitaxy (MBE) system. We found a remarkable decrease in the substrate temperature during the 2nd stage in which the film composition changes to a Ag excess. A single phase chalcopyrite AIGS thin film with a slightly Ag poor composition was obtained by using the temperature monitoring composition method. The cell performance of the AIGS thin film solar cell was found to strongly depend on the Ga/(In+Ga) and Ag/(In+Ga) atomic ratios.A high efficiency wide-gap (Eg=1.7eV) Ag(In0.2Ga0.8)Se2 thin film solar cell with a total-area efficiency of 9.3% (10.2% active area efficiency), Voc = 949mV, Jsc = 17.0 mA/cm2, FF = 0.577, and total area = 0.42 cm2 was achieved. The junction formation mechanism of AIGS devices is discussed based on electron beam induced current (EBIC) and scanning capacitance microscopy (SCM) analyses.


2013 ◽  
Vol 712-715 ◽  
pp. 309-312 ◽  
Author(s):  
Ming Kun Xu

P+a-SiC/ I nc-Si/N+a-Si structure solar cells is simulated by AMPS-1D program package to characterize the new thin film solar cell. In order to analyze the characteristics of the device, the thickness of layer are considered. The results show that the thickness of layer and the value of layer have a great effect on the conversion efficiency. Our results suggest a high performance P a-SiC/ I nc-Si/N a-Si structure solar cells with high efficiency of 14.411% and fill factor of 0.738. The simulation result is potentially valuable in exploring gradual bandgap P+a-SiC/I nc-Si/N+a-Si structure solar cells with high performance.


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