scholarly journals Vapor-Phase Fabrication and Condensed-Phase Application of a MOF-Node-Supported Iron Thiolate Photocatalyst for Nitrate Conversion to Ammonium

2019 ◽  
Vol 2 (12) ◽  
pp. 8695-8700 ◽  
Author(s):  
Hyeju Choi ◽  
Aaron W. Peters ◽  
Hyunho Noh ◽  
Leighanne C. Gallington ◽  
Ana E. Platero-Prats ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Condensed Phase ◽  
Iron Thiolate ◽  
Supported Iron

Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
Shukun Duan ◽  
Dacheng Lu
Keyword(s):  
Phase Diagram ◽  
Phase Diagrams ◽  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Condensed Phase ◽  
Growth Temperature ◽  
Vapor Interface ◽  
Interface Phase ◽  
Movpe Growth ◽  
Reactor Pressure

ABSTRACTA thermodynamic analysis of GaN grown by MOVPE has been proposed based on quasi-thermodynamic equilibrium established on the solid-vapor interface. Phase diagrams for the MOVPE growth of GaN using TEGa and NH3 has been calculated. The phase diagram is consists of four phases regions: the region for single condensed phase of GaN, the region for double condensed phase of GaN (s) +Ga(l), the etching region with Ga droplets and the etching region without Ga droplets. The effect of growth temperature, reactor pressure, content of carrier gas, deposition ratio of NH3 and V/III ratio upon growth of GaN using MOVPE has been studied.

Examinations of the Matrix Isolation Fourier Transform Infrared Spectra of Organic Compounds: Part XVI

1989 ◽  
Vol 43 (6) ◽  
pp. 1008-1016 ◽  
Author(s):  
W. M. Coleman ◽  
Bert M. Gordon
Keyword(s):  
Fourier Transform ◽  
Ir Spectra ◽  
Vapor Phase ◽  
Infrared Spectra ◽  
Condensed Phase ◽  
Matrix Isolation ◽  
Absorption Bands ◽  
Argon Matrix ◽  
The Matrix ◽  
The Impact

Information concerning the matrix isolation Fourier transform infrared spectra of a series of alkanes, esters, lactones, lactams, phenols, alcohols, amides, alkenes, and ketones is presented. A comparison between the characteristics of the spectra in two matrices (argon and xenon) as well as in the absence of any matrix (bare gold disk) is drawn. The impact of these matrices on the characteristics of the IR spectra is compared with the impact observed when spectra are gathered in the vapor phase as well as the condensed phase/solid state. For the majority of compounds studied, the major absorption bands of each class of compound fall between higher values for the vapor phase and lower values for the condensed phase when either argon or xenon is used as the matrix gas. The few exceptions are discussed. The absorption bands found in the xenon matrix are usually at a lower energy than are comparable bands in the argon matrix. In most all cases, the values of absorptions for compounds on the bare disk were lower than the comparable values found in the argon matrix. These results represent the first extensive study at 10 K of the effect of different matrix gas hosts and document the proposal that preconceptions of noble gases as inert hosts for the examination of FT-IR spectra at low temperature are not valid.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

191. Planar Waveguide Interferometers for Vapor Phase Sensing

1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  
Vapor Phase ◽  
Planar Waveguide

COMBUSTION OF ENERGETIC MATERIALS GOVERNED BY REACTIONS IN THE CONDENSED PHASE

2010 ◽  
Vol 9 (2) ◽  
pp. 147-192 ◽  
Author(s):  
Valery P. Sinditskii ◽  
Viacheslav Yu. Egorshev ◽  
Valery V. Serushkin ◽  
Anton I. Levshenkov ◽  
Maxim V. Berezin ◽  
...  
Keyword(s):  
Condensed Phase ◽  
Energetic Materials
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