scholarly journals CdS/Low-Band-Gap Kesterite Thin-Film Solar Cell Absorber Heterojunction: Energy Level Alignment and Dominant Recombination Process

2018 ◽  
Vol 1 (2) ◽  
pp. 475-482 ◽  
Author(s):  
Marcus Bär ◽  
Thomas Schnabel ◽  
Jan-Hendrik Alsmeier ◽  
Stefan Krause ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Energy Level ◽  
Band Gap ◽  
Thin Film Solar Cell ◽  
Recombination Process ◽  
Low Band Gap ◽  
Energy Level Alignment

Few possible models for 19.9%efficient

2014 ◽  
Vol 6 (1) ◽  
pp. 1058-1065
Author(s):  
Vijaya N Vanakudare ◽  
Rajeev L Deshpande
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Modeling And Simulation ◽  
Band Gap ◽  
Thin Film Solar Cell ◽  
Device Modeling ◽  
Simulation Studies ◽  
Cigs Thin Film ◽  
Graded Band Gap ◽  
Material Saving

: Device modeling and simulation studies of a CIGS thin film solar cell have been carried out using SCAPS 2902. A variety of graded band gap structures of efficiency around 19.9% are examined. The study shows that material saving models with efficiency η around 19.9% is possible

Ge-alloyed CZTSe thin film solar cell using molecular precursor adopting spray pyrolysis approach

RSC Advances ◽  
2016 ◽  
Vol 6 (44) ◽  
pp. 37621-37627 ◽  
Author(s):  
Dhruba B. Khadka ◽  
SeongYeon Kim ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Thin Film Solar Cell ◽  
Molecular Precursors ◽  
Molecular Precursor

We report a promising fabrication approach for the synthesis of Ge-alloyed Cu2Zn(GexSn1−x)Se4 (CZGTSe) thin films using molecular precursors by spray pyrolysis to obtain band gap tuned kesterite solar cells.

Band Gap Optimization of CdTeSe Thin-Film Solar Cells

2016 ◽  
Vol 12 (2) ◽  
pp. 4213-4218 ◽  
Author(s):  
Sean Meng ◽  
Yanfa Yan
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Modeling And Simulation ◽  
Band Gap ◽  
Thin Film Solar Cell ◽  
Thin Film Solar Cells ◽  
Device Modeling ◽  
Simulation Studies ◽  
Single Junction ◽  
Graded Band Gap

Device modeling and simulation studies of a CdTeSe thin film solar cell have been carried out. A variety of band-gap profiles, including ungraded, front graded, back graded, and double graded profiles of the CdTeSe absorber layer are examined and their performance characteristics have been analyzed. The calculation reveals that single junction cells with band-gap at the optimum value of 1.38 eV exhibit the maximum performance; alloys of CdTe and CdSe with a ratio of 1:1 forming CdTe0.5Se0.5 achieve the band-gap of 1.38 eV due to the bowing effect. The benefits of the band-gap grading are evaluated when the minimum band-gap is set at the optimum band-gap of 1.38 eV. It is shown that only few graded band-gap profiles exhibit an increase in efficiency, while most of graded profiles reduce performances.

scholarly journals Selenization of CuInS2 by rapid thermal processing – an alternative approach to induce a band gap grading in chalcopyrite thin-film solar cell absorbers?

2019 ◽  
Vol 7 (5) ◽  
pp. 2087-2094 ◽  
Author(s):  
Roberto Félix ◽  
Alfons Weber ◽  
Ole Zander ◽  
Humberto Rodriguez-Álvarez ◽  
Björn-Arvid Schubert ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Band Gap ◽  
Thermal Processing ◽  
Thin Film Solar Cell ◽  
Rapid Thermal Processing ◽  
Alternative Approach

Characterization of selenium-treated CuInS2 reveals a band gap grading and a surface Cu enrichment, opening new chalcopyrite absorber tailoring opportunities.

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