Strengthening the Properties of Earth-Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials via Cation Incorporation with Ni

2022 ◽  
Author(s):  
Fancong Zeng ◽  
Yingrui Sui ◽  
Meiling Ma ◽  
Na Zhao ◽  
Tianyue Wang ◽  
...  
Keyword(s):  
Photovoltaic Materials ◽  
Earth Abundant

scholarly journals Defect Engineering in Multinary Earth-Abundant Chalcogenide Photovoltaic Materials

2017 ◽  
Vol 7 (11) ◽  
pp. 1602366 ◽  
Author(s):  
Donghyeop Shin ◽  
Bayrammurad Saparov ◽  
David B. Mitzi
Keyword(s):  
Defect Engineering ◽  
Photovoltaic Materials ◽  
Earth Abundant

Dynamic free energy surfaces for sodium diffusion in type II silicon clathrates

2016 ◽  
Vol 18 (7) ◽  
pp. 5121-5128 ◽  
Author(s):  
J. G. Slingsby ◽  
N. A. Rorrer ◽  
L. Krishna ◽  
E. S. Toberer ◽  
C. A. Koh ◽  
...  
Keyword(s):  
Free Energy ◽  
Wide Band ◽  
Band Gaps ◽  
Type Ii ◽  
Silicon Clathrates ◽  
Photovoltaic Materials ◽  
Earth Abundant ◽  
Energy Surfaces ◽  
Sodium Diffusion

Earth abundant semiconducting type II Si clathrates have attracted attention as photovoltaic materials due to their wide band gaps.

Defect Engineering in Earth‐Abundant Cu 2 ZnSn(S,Se) 4 Photovoltaic Materials via Ga 3+ ‐Doping for over 12% Efficient Solar Cells

2021 ◽  
pp. 2010325
Author(s):  
Yachao Du ◽  
Shanshan Wang ◽  
Qingwen Tian ◽  
Yuechao Zhao ◽  
Xiaohuan Chang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Engineering ◽  
Photovoltaic Materials ◽  
Earth Abundant

scholarly journals Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials

2018 ◽  
Vol 5 (4) ◽  
pp. 1700744 ◽  
Author(s):  
Jianjun Li ◽  
Dongxiao Wang ◽  
Xiuling Li ◽  
Yu Zeng ◽  
Yi Zhang
Keyword(s):  
Cation Substitution ◽  
Photovoltaic Materials ◽  
Earth Abundant

scholarly journals Thin-Film Solar Cells: Cation Substitution in Earth-Abundant Kesterite Photovoltaic Materials (Adv. Sci. 4/2018)

2018 ◽  
Vol 5 (4) ◽  
pp. 1870021 ◽  
Author(s):  
Jianjun Li ◽  
Dongxiao Wang ◽  
Xiuling Li ◽  
Yu Zeng ◽  
Yi Zhang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cation Substitution ◽  
Photovoltaic Materials ◽  
Earth Abundant

Room Temperature Alkali Metal Reduction of Carbon Dioxide

2020 ◽  
Author(s):  
Lucas A. Freeman ◽  
Akachukwu D. Obi ◽  
Haleigh R. Machost ◽  
Andrew Molino ◽  
Asa W. Nichols ◽  
...  
Keyword(s):  
Alkali Metal ◽  
Alkali Metals ◽  
Room Temperature ◽  
Chemical Reduction ◽  
Bond Cleavage ◽  
Open Shell ◽  
Metal Reduction ◽  
One Pot ◽  
Earth Abundant ◽  
Electron Reduction

The reduction of the relatively inert carbon–oxygen bonds of CO<sub>2</sub> to access useful CO<sub>2</sub>-derived organic products is one of the most important fundamental challenges in synthetic chemistry. Facilitating this bond-cleavage using earth-abundant, non-toxic main group elements (MGEs) is especially arduous because of the difficulty in achieving strong inner-sphere interactions between CO<sub>2</sub> and the MGE. Herein we report the first successful chemical reduction of CO<sub>2</sub> at room temperature by alkali metals, promoted by a cyclic(alkyl)(amino) carbene (CAAC). One-electron reduction of CAAC-CO<sub>2</sub> adduct (<b>1</b>) with lithium, sodium or potassium metal yields stable monoanionic radicals clusters [M(CAAC–CO<sub>2</sub>)]<sub>n</sub>(M = Li, Na, K, <b> 2</b>-<b>4</b>) and two-electron alkali metal reduction affords open-shell, dianionic clusters of the general formula [M<sub>2</sub>(CAAC–CO<sub>2</sub>)]<sub>n </sub>(<b>5</b>-<b>8</b>). It is notable that these crystalline clusters of reduced CO<sub>2</sub> may also be isolated via the “one-pot” reaction of free CO<sub>2</sub> with free CAAC followed by the addition of alkali metals – a reductive process which does not occur in the absence of carbene. Each of the products <b>2</b>-<b>8</b> were investigated using a combination of experimental and theoretical methods.<br>

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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