MXene-Based Tailoring of Carrier Dynamics, Defect Passivation, and Interfacial Band Alignment for Efficient Planar p–i–n Perovskite Solar Cells

Author(s):  
Venkata S. N. Chava ◽  
P. S. Chandrasekhar ◽  
Ashley Gomez ◽  
Luis Echegoyen ◽  
Sreeprasad T. Sreenivasan
2020 ◽  
Author(s):  
Deepak Thrithamarassery Gangadharan ◽  
David A. Valverde-Chávez ◽  
Andres-Felipe Castro-Mendez ◽  
Vivek Prakash ◽  
Ricardo Izquierdo ◽  
...  

2021 ◽  
pp. 1596-1606
Author(s):  
Qisen Zhou ◽  
Junming Qiu ◽  
Yunfei Wang ◽  
Mei Yu ◽  
Jianhua Liu ◽  
...  

Author(s):  
Jing Ren ◽  
Shurong Wang ◽  
Jianxing Xia ◽  
Chengbo Li ◽  
Lisha Xie ◽  
...  

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Chi Zhang ◽  
Zhiyuan He ◽  
Xuanhui Luo ◽  
Rangwei Meng ◽  
Mengwei Chen ◽  
...  

AbstractIn this work, inorganic tin-doped perovskite quantum dots (PQDs) are incorporated into carbon-based perovskite solar cells (PSCs) to improve their photovoltaic performance. On the one hand, by controlling the content of Sn2+ doping, the energy level of the tin-doped PQDs can be adjusted, to realize optimized band alignment and enhanced separation of photogenerated electron–hole pairs. On the other hand, the incorporation of tin-doped PQDs provided with a relatively high acceptor concentration due to the self-p-type doping effect is able to reduce the width of the depletion region near the back surface of the perovskite, thereby enhancing the hole extraction. Particularly, after the addition of CsSn0.2Pb0.8I3 quantum dots (QDs), improvement of the power conversion efficiency (PCE) from 12.80 to 14.22% can be obtained, in comparison with the pristine device. Moreover, the experimental results are analyzed through the simulation of the one-dimensional perovskite/tin-doped PQDs heterojunction.


Solar Energy ◽  
2021 ◽  
Vol 224 ◽  
pp. 472-479
Author(s):  
Ronghong Zheng ◽  
Shuangshuang Zhao ◽  
Hua Zhang ◽  
Haoyue Li ◽  
Jia Zhuang ◽  
...  

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