Large Power Factors in Wide Band Gap Semiconducting RFeO3 Materials for High-Temperature Thermoelectric Applications

2020 ◽  
Vol 3 (11) ◽  
pp. 11193-11205
Author(s):  
Iyyappa Rajan Panneerselvam ◽  
Carlos Baldo ◽  
Mahalakshmi Sahasranaman ◽  
Sundararajan Murugesan ◽  
Navamathavan Rangaswamy ◽  
...  
Keyword(s):  
High Temperature ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Large Power

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS

1995 ◽  
Vol 06 (01) ◽  
pp. 211-236 ◽  
Author(s):  
R.J. TREW ◽  
M.W. SHIN
Keyword(s):  
High Temperature ◽  
Band Gap ◽  
Microwave Power ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Superior Performance ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors

Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.

scholarly journals High-temperature Mott transition in wide-band-gap semiconductor quantum wells

2014 ◽  
Vol 90 (20) ◽  
Author(s):  
G. Rossbach ◽  
J. Levrat ◽  
G. Jacopin ◽  
M. Shahmohammadi ◽  
J.-F. Carlin ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Mott Transition ◽  
Wide Band Gap ◽  
Semiconductor Quantum Wells
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