Predicting Device Parameters for Dye-Sensitized Solar Cells from Electronic Structure Calculations to Reproduce Experiment

2020 ◽  
Vol 3 (5) ◽  
pp. 4367-4376
Author(s):  
Zhenqing Yang ◽  
Kuan Li ◽  
Chundan Lin ◽  
Leon R. Devereux ◽  
Wansong Zhang ◽  
...  
2012 ◽  
Vol 14 (17) ◽  
pp. 4330-4333 ◽  
Author(s):  
Peng Gao ◽  
Hoi Nok Tsao ◽  
Michael Grätzel ◽  
Mohammad K. Nazeeruddin

2009 ◽  
Vol 107 (23-24) ◽  
pp. 2569-2577 ◽  
Author(s):  
Yuanzuo Li ◽  
Xiaohong Zhao ◽  
Huixing Li ◽  
Dezhi Jin ◽  
Fengcai Ma ◽  
...  

2011 ◽  
Vol 133 (20) ◽  
pp. 8005-8013 ◽  
Author(s):  
Tangui Le Bahers ◽  
Frédéric Labat ◽  
Thierry Pauporté ◽  
Philippe P. Lainé ◽  
Ilaria Ciofini

Author(s):  
Emanuele Maggio ◽  
Alessandro Troisi

We have derived an expression for the rate of electron transfer between a semiconductor and a redox centre connected to the semiconductor via a molecular bridge. This model is particularly useful to study the charge recombination (CR) process in dye-sensitized solar cells, where the dye is often connected to the semiconductor by a conjugated bridge. This formalism, designed to be coupled with density functional theory electronic structure calculations, can be used to explore the effect of changing the bridge on the rate of interfacial electron transfer. As an example, we have evaluated the CR rate for a series of systems that differ in the bridge length.


Sign in / Sign up

Export Citation Format

Share Document