Great Differences between Low-Temperature Grown Co2FeSi and Co2MnSi Films on Single-Crystalline Oxides

2019 ◽  
Vol 1 (11) ◽  
pp. 2371-2379 ◽  
Author(s):  
Kohei Kudo ◽  
Yasunari Hamazaki ◽  
Shinya Yamada ◽  
Satoshi Abo ◽  
Yoshihiro Gohda ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystalline ◽  
Crystalline Oxides

Hydrothermal synthesis of single-crystalline La0.5Ca0.5MnO3 nanowires at low temperature

2004 ◽  
Vol 14 (18) ◽  
pp. 2787 ◽  
Author(s):  
T. Zhang ◽  
C. G. Jin ◽  
T. Qian ◽  
X. L. Lu ◽  
J. M. Bai ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Low Temperature ◽  
Single Crystalline

Low temperature growth of YBa 2 Cu 3 O 6 + δ single crystalline films from fluoride/oxide solvents

1996 ◽  
Vol 167 (3-4) ◽  
pp. 566-569 ◽  
Author(s):  
Y. Yamada ◽  
Y. Niiori ◽  
Y. Yoshida ◽  
I. Hirabayashi ◽  
S. Tanaka
Keyword(s):  
Low Temperature ◽  
Temperature Growth ◽  
Single Crystalline ◽  
Low Temperature Growth ◽  
Crystalline Films

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

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