Performance Enhancement of All-Inorganic Quantum Dot Light-Emitting Diodes via Surface Modification of Nickel Oxide Nanoparticles Hole Transport Layer

2019 ◽  
Vol 1 (10) ◽  
pp. 2096-2102
Author(s):  
Lixi Wang ◽  
Jiangyong Pan ◽  
Jianping Qian ◽  
Chengjun Liu ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Surface Modification ◽  
Quantum Dot ◽  
Nickel Oxide ◽  
Performance Enhancement ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Oxide Nanoparticles ◽  
Nickel Oxide Nanoparticles ◽  
Light Emitting

scholarly journals Nanocomposite of nickel oxide nanoparticles and polyethylene oxide as printable hole transport layer for organic solar cells

2019 ◽  
Vol 3 (6) ◽  
pp. 1418-1426 ◽  
Author(s):  
Marta Ruscello ◽  
Tanmoy Sarkar ◽  
Artem Levitsky ◽  
Giovanni Maria Matrone ◽  
Nikolaos Droseros ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Nickel Oxide ◽  
Polyethylene Oxide ◽  
Organic Solar Cells ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Oxide Nanoparticles ◽  
Nickel Oxide Nanoparticles

Low temperature NiOx is achieved using PEO as sacrificial ink additive to make hole transport layer for solar cells.

scholarly journals All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

2016 ◽  
Vol 26 (5) ◽  
pp. 503-509 ◽  
Author(s):  
Jiahui Li ◽  
Yuanlong Shao ◽  
Xuecheng Chen ◽  
Hongzhi Wang ◽  
Yaogang Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting

scholarly journals Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane)

2020 ◽  
Vol 10 (17) ◽  
pp. 6081
Author(s):  
Junekyun Park ◽  
Eunkyu Shin ◽  
Jongwoo Park ◽  
Yonghan Roh
Keyword(s):  
Quantum Dot ◽  
Photoelectron Spectroscopy ◽  
Surface Defects ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Atmospheric Conditions ◽  
Light Emitting ◽  
X Ray

We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication process. For instance, we can effectively deactivate the surface defects of quantum dot (QD) (e.g., CdSe/ZnS core-shell QDs in the current work) with the SiO bonds by simply mixing QDs with hexamethyldisilazane (HMDS) under atmospheric conditions. We observed the substantial improvement of device characteristics such that the current efficiency, the maximum luminance, and the QD lifetime were improved by 1.7–1.8 times, 15–18%, and nine times, respectively, by employing this process. Based on the experimental data (e.g., energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS)), we estimated that the growth of the SiOx on the surface of QDs is self-limited: the SiOx are effective to passivate the surface defects of QDs without deteriorating the intrinsic properties including the color-purity of QDs. Second, we proposed that the emission profiling study can lead us to the fundamental understanding of charge flow in each layer of QD-LEDs. Interestingly enough, many problems related to the charge-imbalance phenomenon were simply solved by selecting the combination of thicknesses of the hole transport layer (HTL) and the electron transport layer (ETL).

scholarly journals Enhanced efficiency and high temperature stability of hybrid quantum dot light-emitting diodes using molybdenum oxide doped hole transport layer

RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 16252-16257 ◽  
Author(s):  
Jinyoung Yun ◽  
Jaeyun Kim ◽  
Byung Jun Jung ◽  
Gyutae Kim ◽  
Jeonghun Kwak
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Molybdenum Oxide ◽  
Temperature Stability ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Stable Operation ◽  
High Temperature Stability ◽  
Light Emitting

QLEDs introducing a p-doped HTL exhibit stable operation at high temperature up to 400 K.

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Luminance ◽  
Light Emitting

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.

scholarly journals High-performance quantum dot light-emitting diodes with hybrid hole transport layer via doping engineering

2016 ◽  
Vol 24 (23) ◽  
pp. 25955 ◽  
Author(s):  
Qianqian Huang ◽  
Jiangyong Pan ◽  
Yuning Zhang ◽  
Jing Chen ◽  
Zhi Tao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting
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