Effect of Dy3+ and Eu3+ 4f Band Gap States on Luminescence and Energy Transfer in Monoclinic Lutetium Tungstate

2019 ◽  
Vol 1 (5) ◽  
pp. 772-782 ◽  
Author(s):  
Bangfu Ding ◽  
Ce Yu ◽  
Jiandi Xin ◽  
Luqiao Yin ◽  
Zhaohua Li ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Band Gap ◽  
Gap States

scholarly journals Appearance of efficient luminescence energy transfer in doped orthovanadate nanocrystals

2017 ◽  
Vol 50 (3) ◽  
pp. 787-794 ◽  
Author(s):  
Swati Bishnoi ◽  
G. Swati ◽  
Paramjeet Singh ◽  
V. V. Jaiswal ◽  
Mukesh K. Sahu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Band Gap ◽  
Photoluminescence Intensity ◽  
X Ray Diffraction ◽  
Synthesis Mechanism ◽  
Enhanced Photoluminescence ◽  
Nir Absorption ◽  
Decay Parameters

This paper reports the detailed synthesis mechanism and the structural, morphological and optical characterization of ultraviolet (∼311 nm) excitable samarium doped gadolinium yttrium orthovanadate, (Gd,Y)VO4:Sm3+, nanocrystals. X-ray diffraction and Rietveld refinement studies confirmed that the synthesized samples crystallize in a tetragonal structure withI41/amdspace group. The enhanced photoluminescence intensity of (Gd,Y)VO4:Sm3+compared with the existing YVO4:Sm3+phosphor clearly indicates the significant role of Gd3+ions. This has been attributed to the sensitization of the6PJenergy level of Gd3+ions by energy transfer from orthovanadate (VO43−) ions and subsequent energy trapping by Sm3+ions. The energy transfer from VO43−to Sm3+viaGd3+ions as intermediates and concentration quenching of Gd3+luminescence are discussed in detail. The optical band gap of the as-prepared nanocrystals has been estimated using UV–vis–NIR absorption spectroscopy, which reveals a slightly higher band gap (3.75 eV) for YVO4as compared to GdYVO4(3.50 eV). Furthermore, confocal microcopy, decay parameters and Commission Internationale de l'Eclairage chromatic coordinates have supplemented these studies, which established the suitability of these nanophosphors for achieving spectral conversion in silicon solar cells.

Luminescence tuning of Ce3+, Pr3+ activated (Y,Gd)AGG system by band gap engineering and energy transfer

2020 ◽  
Vol 38 (5) ◽  
pp. 514-522 ◽  
Author(s):  
Yiyi Ou ◽  
Weijie Zhou ◽  
Fengkai Ma ◽  
Chunmeng Liu ◽  
Rongfu Zhou ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Band Gap ◽  
Band Gap Engineering

The origin and nature of silicon band‐gap states at the Si/SiO2interface

1981 ◽  
Vol 38 (11) ◽  
pp. 884-886 ◽  
Author(s):  
J. Singh ◽  
A. Madhukar
Keyword(s):  
Band Gap ◽  
Gap States

Attosecond energy transfer dynamics in band-gap materials (Conference Presentation)

2018 ◽  
Author(s):  
Florian Siegrist ◽  
Annkatrin Sommer ◽  
Malte Schröder ◽  
Tobias Boolakee ◽  
Keyhan Golyari ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Band Gap

Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)

1986 ◽  
Vol 56 (26) ◽  
pp. 2846-2849 ◽  
Author(s):  
R. Haight ◽  
J. Bokor
Keyword(s):  
Band Gap ◽  
Direct Observation ◽  
Gap States

Band gap states of V and Cr in 6H-silicon carbide

1997 ◽  
Vol 65 (3) ◽  
pp. 329-331 ◽  
Author(s):  
N. Achtziger ◽  
J. Grillenberger ◽  
W. Witthuhn
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Gap States
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