Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
2008 ◽
Vol 20
(46)
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pp. 465223
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1995 ◽
Vol 246
(1-2)
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pp. 123-132
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1995 ◽
Vol 216
(2)
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pp. 255-258
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Keyword(s):
1996 ◽
Vol 65
(5)
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pp. 1186-1188
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