One-Trillionth Level Toluene Detection Using a Dual-Designed Semiconductor Gas Sensor: Material and Sensor-Driven Designs

2020 ◽  
Vol 2 (12) ◽  
pp. 4122-4126
Author(s):  
Koichi Suematsu ◽  
Wataru Harano ◽  
Shigeto Yamasaki ◽  
Ken Watanabe ◽  
Kengo Shimanoe
2004 ◽  
Vol 828 ◽  
Author(s):  
J. Arbiol ◽  
J. R. Morante ◽  
M. Rumyantseva ◽  
V. Kovalenko ◽  
A. Gaskov

ABSTRACTIn the present work, we report a detailed study based on transmission electron microscopy of the microstructure and composition of the Fe2O3: SnO2 nanometrical binary system obtained by sol-gel. We studied a set of samples based in a pure Fe2O3 material where we added SnO 2 from 0 to 50% Sn-Fe nominal content. The structure of our composites will change from pure a-Fe2O3 to the well-known cassiterite SnO 2 structure for high Sn content. Distortions on the structural parameters will be attributed to the presence Sn4+ ions on the α-Fe2O3 structure and Fe3+ ions on the SnO2 cassiterite structure.


ChemInform ◽  
2010 ◽  
Vol 27 (26) ◽  
pp. no-no
Author(s):  
H. YAMAURA ◽  
J. TAMAKI ◽  
K. MORIYA ◽  
N. MIURA ◽  
N. YAMAZOE

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2103 ◽  
Author(s):  
Tae-Hee Han ◽  
So-Young Bak ◽  
Sangwoo Kim ◽  
Se Hyeong Lee ◽  
Ye-Ji Han ◽  
...  

This paper introduces a method for improving the sensitivity to NO2 gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO2 gas than the pristine CuO gas sensor. The heterojunction in CuO/ZnO gas sensors caused a decrease in the width of the hole accumulation layer (HAL) and an increase in the initial resistance. The possibility to influence the width of the HAL helped improve the NO2 sensing characteristics of the gas sensor. The growth morphology, atomic composition, and crystal structure of the gas sensors were analyzed using field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.


1993 ◽  
Vol 14 (1-3) ◽  
pp. 687-689 ◽  
Author(s):  
E.Ye. Gutman ◽  
I.A. Myasnikov ◽  
S.A. Kazakov ◽  
S.V. Rugentsev ◽  
S.K. Dymenko

2008 ◽  
Vol 132 (1) ◽  
pp. 239-242 ◽  
Author(s):  
Y.C. Lee ◽  
Hui Huang ◽  
O.K. Tan ◽  
M.S. Tse

2001 ◽  
Vol 80 (2) ◽  
pp. 125-131 ◽  
Author(s):  
Go Sakai ◽  
Naoki Matsunaga ◽  
Kengo Shimanoe ◽  
Noboru Yamazoe

2003 ◽  
Vol 436 (1) ◽  
pp. 127-131 ◽  
Author(s):  
W Maziarz ◽  
P Potempa ◽  
A Sutor ◽  
T Pisarkiewicz

2018 ◽  
Vol 6 (21) ◽  
pp. 5803-5811 ◽  
Author(s):  
Jun Yu ◽  
Mohammad Khazaei ◽  
Naoto Umezawa ◽  
Junjie Wang

Two-dimensional (2D) boron structures, in which boron atoms arrange in a 2D manner, have attracted great attention for their potential applications in nanoelectronic devices.


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