Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering

2021 ◽  
Vol 3 (2) ◽  
pp. 629-638
Author(s):  
Alireza Kashir ◽  
Hyungwoo Kim ◽  
Seungyeol Oh ◽  
Hyunsang Hwang
Keyword(s):  
Remnant Polarization ◽  
Ferroelectric Film ◽  
Interface Engineering ◽  
Large Remnant Polarization

Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget

2021 ◽  
Vol 570 ◽  
pp. 151152
Author(s):  
Chin-I Wang ◽  
Chun-Yuan Wang ◽  
Teng-Jan Chang ◽  
Yu-Sen Jiang ◽  
Jing-Jong Shyue ◽  
...  
Keyword(s):  
Remnant Polarization ◽  
Atomic Layer ◽  
Thermal Budget ◽  
Capping Layer ◽  
Low Thermal Budget ◽  
Large Remnant Polarization

Enhanced remnant polarization in ferroelectric Bi6Fe2Ti3O18 thin films

CrystEngComm ◽  
2015 ◽  
Vol 17 (7) ◽  
pp. 1609-1614 ◽  
Author(s):  
Dongpo Song ◽  
Xuzhong Zuo ◽  
Bing Yuan ◽  
Xianwu Tang ◽  
Wenhai Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Remnant Polarization ◽  
Ferroelectric Materials ◽  
Practical Applications ◽  
Ferroelectric Memory ◽  
Large Remnant Polarization

For practical applications of ferroelectric memory, a large remnant polarization in nontoxic Pb-free ferroelectric materials is required.

Interface Engineering To Boost Photoresponse Performance of Self-Powered, Broad-Bandwidth PEDOT:PSS/Si Heterojunction Photodetector

2016 ◽  
Vol 8 (29) ◽  
pp. 19158-19167 ◽  
Author(s):  
Zhimin Liang ◽  
Pingyang Zeng ◽  
Pengyi Liu ◽  
Chuanxi Zhao ◽  
Weiguang Xie ◽  
...  
Keyword(s):  
Interface Engineering ◽  
Broad Bandwidth ◽  
Self Powered
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