In Situ XRD Observation of Crystal Deformation of Piezoelectric (K,Na)NbO3 Thin Films

2020 ◽  
Vol 2 (7) ◽  
pp. 2084-2089
Author(s):  
Goon Tan ◽  
Sang Hyo Kweon ◽  
Kenji Shibata ◽  
Tomoaki Yamada ◽  
Isaku Kanno
Keyword(s):  
Thin Films ◽  
In Situ Xrd

scholarly journals Thermal stability of AlCoCrCuFeNi high entropy alloy thin films studied by in-situ XRD analysis

2010 ◽  
Vol 204 (12-13) ◽  
pp. 1989-1992 ◽  
Author(s):  
V. Dolique ◽  
A.-L. Thomann ◽  
P. Brault ◽  
Y. Tessier ◽  
P. Gillon
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Xrd Analysis ◽  
High Entropy Alloy ◽  
High Entropy ◽  
In Situ Xrd ◽  
Thermal Stability Of

In-situ XRD study of alloyed Cu 2 ZnSnSe 4 –CuInSe 2 thin films for solar cells

2015 ◽  
Vol 582 ◽  
pp. 272-275 ◽  
Author(s):  
Stefan Hartnauer ◽  
Leonard A. Wägele ◽  
Enrico Jarzembowski ◽  
Roland Scheer
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
In Situ Xrd ◽  
Xrd Study

scholarly journals Crystallization of HfO2 thin films and their influence on laser induced damage

2020 ◽  
Vol 238 ◽  
pp. 12004
Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Ruggero Frison ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Laser Irradiation ◽  
Coated Sample ◽  
Two Dimensional ◽  
In Situ Xrd ◽  
Laser Induced Damage ◽  
Irradiation Resistance

We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.

scholarly journals Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1−x−y Thin Films by In Situ Measurements

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2572
Author(s):  
Xueqiong Su ◽  
Yong Pan ◽  
Dongwen Gao ◽  
Shufeng Li ◽  
Jin Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallization Temperature ◽  
Liquid State ◽  
Thermal Evolution ◽  
Glassy State ◽  
Amorphous Structure ◽  
In Situ Raman Spectroscopy ◽  
In Situ Xrd ◽  
Onset Crystallization Temperature

To understand the effects of thermal annealing on the structure of GexAsySe1−x−y thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction (XRD) at different temperature (773 K or 1073 K) in a vacuum (10−1 Pa) environment. The entire process of crystallization can be observed by using in situ XRD, which is from the appearance of a crystal structure to melting liquid-state and ultimately to the disappearance of the amorphous structure. In the crystallized process, the corresponding state-transition temperatures Tx (the onset crystallization temperature), Tl (the transition temperature from glassy-state to liquid-state), Tp (peak crystallization temperature) are linear with MCN (Mean Coordination Number). In order to obtain information about changes in the amorphous structural origin of the anneal-induced material, the samples were analyzed by in situ Raman spectroscopy. Analysis of the results through decomposing the Raman spectra into different structural units showed that the Ge−Ge, As−As, or Se−Se homopolar bonds as the nonequilibrium minority carriers could be found in films. It suggests that the formation of these bonds cannot be completely suppressed in any case, as one falls and another rises.

scholarly journals Stress Development and Adhesion in Hydrogenated Nano-Columnar Pd and Pd/Ti Ultra-Thin Films

2014 ◽  
Vol 996 ◽  
pp. 872-877 ◽  
Author(s):  
Neha Verma ◽  
Amarante J. Böttger
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Residual Stress ◽  
Scanning Electron Microscopy ◽  
Intermediate Layer ◽  
Elastic Anisotropy ◽  
Stress Development ◽  
In Situ Xrd ◽  
Scanning Electron

Stress development upon hydrogenation of about 100 nm thick palladium layers on thermally oxidized silicon wafers with and without an intermediate Ti layer is studied. Stress developed is investigated by in-situ XRD in H2/N2(hydrogenation) and N2(dehydrogenation) gas at RT. The method adopted to measure residual stress involved specimen omega- (ω) and psi- (ψ) tilting, on two different diffractometer geometries (focusing and parallel). For the stress analysis, the presence of intrinsic elastic anisotropy of the film is considered. Upon hydrogenation α-Pd transformation to β-PdHoccurs and because of the constrained in-plane expansion a large compressive stress develops. Scanning electron microscopy shows that films with a Ti intermediate layer adhere better to the substrate upon hydrogen cycling, whereas, pure Pd film start cracking and buckling.

In-situ XRD vs ex-situ vacuum annealing of tantalum oxynitride thin films: Assessments on the structural evolution

2018 ◽  
Vol 438 ◽  
pp. 14-19
Author(s):  
L. Cunha ◽  
M. Apreutesei ◽  
C. Moura ◽  
E. Alves ◽  
N.P. Barradas ◽  
...  
Keyword(s):  
Thin Films ◽  
Vacuum Annealing ◽  
Structural Evolution ◽  
Ex Situ ◽  
In Situ Xrd

Origin of the C49–C54 volume anomaly in TiSi2 thin films: an in-situ XRD and TEM analysis

2002 ◽  
Vol 64 (1-4) ◽  
pp. 181-187 ◽  
Author(s):  
B. Chenevier ◽  
O. Chaix-Pluchery ◽  
I. Matko ◽  
R. Madar ◽  
F. La Via
Keyword(s):  
Thin Films ◽  
Tem Analysis ◽  
In Situ Xrd ◽  
Xrd And Tem ◽  
Volume Anomaly

scholarly journals Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films

2021 ◽  
Author(s):  
Arun Kumar ◽  
Vikash Kumar ◽  
Alessandro Romeo ◽  
Claudia Wiemer ◽  
Gino Mariotto
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Raman Spectroscopy ◽  
In Situ Xrd
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