Sensitivity Enhancement of Dual Gate Field-Effect Transistors Using Stacked Bottom Gate Dielectrics

2020 ◽  
Vol 2 (9) ◽  
pp. 2699-2706
Author(s):  
Deepa Bhatt ◽  
Siddhartha Panda
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Sensitivity Enhancement ◽  
Dual Gate ◽  
Bottom Gate

Two-dimensional organic–inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics

2019 ◽  
Vol 7 (14) ◽  
pp. 4004-4012 ◽  
Author(s):  
Fan Zhang ◽  
Huaye Zhang ◽  
Lijie Zhu ◽  
Liang Qin ◽  
Yue Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Dielectric Layers ◽  
Hybrid Perovskite ◽  
Bottom Gate

High-performance bottom-gate 2D-layered (PEA)2SnI4 field-effect transistors have been fabricated using PVA/CL-PVP as gate dielectric layers.

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

scholarly journals Increasing the noise margin in organic circuits using dual gate field-effect transistors

2008 ◽  
Vol 92 (14) ◽  
pp. 143304 ◽  
Author(s):  
M. Spijkman ◽  
E. C. P. Smits ◽  
P. W. M. Blom ◽  
D. M. de Leeuw ◽  
Y. Bon Saint Côme ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Noise Margin ◽  
Dual Gate

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors
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