scholarly journals Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures

Nano Letters ◽  
2018 ◽  
Vol 19 (1) ◽  
pp. 90-99 ◽  
Author(s):  
Carolina Cerqueira ◽  
Jian Yin Qin ◽  
Huong Dang ◽  
Abdelhak Djeffal ◽  
Jean-Christophe Le Breton ◽  
...  
2014 ◽  
Vol 90 (21) ◽  
Author(s):  
Tomohiro Taniguchi ◽  
Wayne M. Saslow
Keyword(s):  

2019 ◽  
Vol 5 (4) ◽  
pp. eaav7200 ◽  
Author(s):  
S. N. Panda ◽  
S. Mondal ◽  
J. Sinha ◽  
S. Choudhury ◽  
A. Barman

Generation and utilization of pure spin current have revolutionized energy-efficient spintronic devices. Spin pumping effect generates pure spin current, and for its increased efficiency, spin-mixing conductance and interfacial spin transparency are imperative. The plethora of reports available on generation of spin current with giant magnitude overlook the interfacial spin transparency. Here, we investigate spin pumping in β-Ta/CoFeB thin films by an all-optical time-resolved magneto-optical Kerr effect technique. From variation of Gilbert damping with Ta and CoFeB thicknesses, we extract the spin diffusion length of β-Ta and spin-mixing conductances. Consequently, interfacial spin transparency is derived as 0.50 ± 0.03 from the spin Hall magnetoresistance model for the β-Ta/CoFeB interface. Furthermore, invariance of Gilbert damping with Cu spacer layer thickness inserted between β-Ta and CoFeB layers confirms the absence of other interface effects including spin memory loss. This demonstrates a reliable and noninvasive way to determine interfacial spin transparency and signifies its role in generation of pure spin current by spin pumping effect.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Haowei Xu ◽  
Hua Wang ◽  
Jian Zhou ◽  
Ju Li

AbstractSpin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time $$\tau$$ τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi2Te4, and the surface of topological crystalline insulator cubic SnTe.


2013 ◽  
Vol 87 (14) ◽  
Author(s):  
Zhenyao Tang ◽  
Eiji Shikoh ◽  
Hiroki Ago ◽  
Kenji Kawahara ◽  
Yuichiro Ando ◽  
...  

2011 ◽  
Vol 266 ◽  
pp. 012089 ◽  
Author(s):  
R Iguchi ◽  
K Ando ◽  
E Saitoh ◽  
T Sato

2016 ◽  
pp. 1481-1504
Author(s):  
Kazuya Ando ◽  
Eiji Saitoh

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