Effect of Replacing Thiophene by Selenophene on the Photovoltaic Performance of Wide Bandgap Copolymer Donors

2019 ◽  
Vol 52 (12) ◽  
pp. 4776-4784 ◽  
Author(s):  
Lian Zhong ◽  
Haijun Bin ◽  
Indunil Angunawela ◽  
Zhenrong Jia ◽  
Beibei Qiu ◽  
...  
Author(s):  
Hoseon You ◽  
Austin Jones ◽  
Boo Soo Ma ◽  
Geon-U Kim ◽  
Seungjin Lee ◽  
...  

In this study, two wide-bandgap PM7 polymer derivatives are developed via simple structural modification of the fused-accepting unit by incorporating ester groups on terthiophene at different positions (i.e., two ester...


2017 ◽  
Vol 7 (22) ◽  
pp. 1701048 ◽  
Author(s):  
Yang Zhou ◽  
Feng Wang ◽  
Yu Cao ◽  
Jian-Pu Wang ◽  
Hong-Hua Fang ◽  
...  

2016 ◽  
Vol 7 (24) ◽  
pp. 4036-4045 ◽  
Author(s):  
Xiaonan Xue ◽  
Bingbing Fan ◽  
Tao Liu ◽  
Xiaobo Sun ◽  
Lijun Huo ◽  
...  

The influence of conjugated side chains on photovoltaic performance of benzodithiophene-based wide-bandgap polymers is studied by traversing chalcogen heterocycles.


2016 ◽  
Vol 33 ◽  
pp. 128-134 ◽  
Author(s):  
Qunping Fan ◽  
Yu Liu ◽  
Huanxiang Jiang ◽  
Wenyan Su ◽  
Linrui Duan ◽  
...  

2016 ◽  
Vol 4 (34) ◽  
pp. 8052-8060 ◽  
Author(s):  
Baobing Fan ◽  
Lei Ying ◽  
Fei Huang ◽  
Yong Cao

In this manuscript we introduced a novel conjugated polymeric additive PBTA-Py with benzodithiophene-alt-benzo[1,2,3]triazole as the backbone and polar pyridyl as the terminal group of the side chains.


2017 ◽  
Vol 5 (18) ◽  
pp. 4471-4479 ◽  
Author(s):  
Xuexue Pan ◽  
Wentao Xiong ◽  
Tao Liu ◽  
Xiaobo Sun ◽  
Lijun Huo ◽  
...  

Extending the π-conjugation length of the polymeric backbone is an effective way to enhance the photovoltaic performance of polymer solar cells (PSCs).


2016 ◽  
Vol 4 (38) ◽  
pp. 9052-9059 ◽  
Author(s):  
Xinxin Huang ◽  
Kangkang Weng ◽  
Lijun Huo ◽  
Bingbing Fan ◽  
Chunhe Yang ◽  
...  

The effect of heteroatoms (O, S and Se) on the optical, electronic and photovoltaic performance of a series of wide-bandgap copolymers has been studied.


2017 ◽  
Vol 29 (21) ◽  
pp. 9162-9170 ◽  
Author(s):  
Mian Cai ◽  
Xichang Bao ◽  
Yan Fang Liu ◽  
Chenchen Li ◽  
Xiao Wang ◽  
...  

Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.


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