Elucidating the Nucleation Event in the C–C Cross-Coupling Step-Growth Dispersion Polymerization

2021 ◽  
Author(s):  
Bastian Haehnle ◽  
Kiran Kaithakkal Jathavedan ◽  
Philipp A. Schuster ◽  
Matthias Karg ◽  
Alexander J. C. Kuehne
Keyword(s):  
Dispersion Polymerization ◽  
Cross Coupling ◽  
Nucleation Event ◽  
Step Growth

Combined chain- and step-growth dispersion polymerization toward PSt particles with soft, clickable patches

2017 ◽  
Vol 8 (8) ◽  
pp. 1404-1416 ◽  
Author(s):  
Kun Jiang ◽  
Yanan Liu ◽  
Yaping Yan ◽  
Shengliu Wang ◽  
Lianying Liu ◽  
...  
Keyword(s):  
Dispersion Polymerization ◽  
Step Growth

Particles with a hard body and soft, clickable dimple- or bulge-patches are prepared by simple combined chain- and step-growth dispersion polymerization.

Monodisperse AIE-Active Conjugated Polymer Nanoparticles via Dispersion Polymerization Using Geminal Cross-Coupling of 1,1-Dibromoolefins

Small ◽  
2016 ◽  
Vol 12 (47) ◽  
pp. 6547-6552 ◽  
Author(s):  
Tao Chen ◽  
Hong Yin ◽  
Ze-Qiang Chen ◽  
Guo-Feng Zhang ◽  
Nuo-Hua Xie ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Dispersion Polymerization ◽  
Cross Coupling ◽  
Polymer Nanoparticles ◽  
Conjugated Polymer Nanoparticles

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Photoredox/Pd dual-catalytic three-component cross-coupling

2020 ◽  
Author(s):  
Logan Forshee ◽  
Kaitie Cartwright ◽  
Jon Tunge ◽  
Megan Hegarty
Keyword(s):  
Cross Coupling
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