Thermal Analysis of Semiconducting Polymer Crystals Free of a Mobile Amorphous Fraction

2021 ◽  
Author(s):  
Ngoc A. Nguyen ◽  
Roddel A. Remy ◽  
Michael E. Mackay
Keyword(s):  
Thermal Analysis ◽  
Semiconducting Polymer ◽  
Amorphous Fraction ◽  
Polymer Crystals

Electron Irradiation Effects in Polyoxymethylene Crystals Grown Inside Trioxane Crystals

1971 ◽  
Vol 29 ◽  
pp. 78-79
Author(s):  
J. P. Colson ◽  
D. H. Reneker
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Detailed Examination ◽  
The Other ◽  
Electron Micrograph ◽  
Irradiation Effects ◽  
Threefold Axis ◽  
Typical Sample ◽  
Polymer Crystals ◽  
Chain Axis

Polyoxymethylene (POM) crystals grow inside trioxane crystals which have been irradiated and heated to a temperature slightly below their melting point. Figure 1 shows a low magnification electron micrograph of a group of such POM crystals. Detailed examination at higher magnification showed that three distinct types of POM crystals grew in a typical sample. The three types of POM crystals were distinguished by the direction that the polymer chain axis in each crystal made with respect to the threefold axis of the trioxane crystal. These polyoxymethylene crystals were described previously.At low magnifications the three types of polymer crystals appeared as slender rods. One type had a hexagonal cross section and the other two types had rectangular cross sections, that is, they were ribbonlike.

Shot-noise simulations of HREM images of polymer crystals

1989 ◽  
Vol 47 ◽  
pp. 342-343
Author(s):  
Philippe Pradère ◽  
Edwin L. Thomas
Keyword(s):  
Low Dose ◽  
Molecular Level ◽  
High Resolution Electron Microscopy ◽  
Crystal Defects ◽  
Inorganic Materials ◽  
Photographic Emulsion ◽  
Polymer Crystals ◽  
Resolution Electron ◽  
Recent Developments ◽  
Lattice Images

High Resolution Electron Microscopy (HREM) is a very powerful technique for the study of crystal defects at the molecular level. Unfortunately polymer crystals are beam sensitive and are destroyed almost instantly under the typical HREM imaging conditions used for inorganic materials. Recent developments of low dose imaging at low magnification have nevertheless permitted the attainment of lattice images of very radiation sensitive polymers such as poly-4-methylpentene-1 and enabled molecular level studies of crystal defects in somewhat more resistant ones such as polyparaxylylene (PPX) [2].With low dose conditions the images obtained are very noisy. Noise arises from the support film, photographic emulsion granularity and in particular, the statistical distribution of electrons at the typical doses of only few electrons per unit resolution area. Figure 1 shows the shapes of electron distribution, according to the Poisson formula :

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

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