Impact of Molecular Weight on the Mechanical and Electrical Properties of a High-Mobility Diketopyrrolopyrrole-Based Conjugated Polymer

2020 ◽  
Vol 53 (11) ◽  
pp. 4490-4500
Author(s):  
Dandan Pei ◽  
Zhongli Wang ◽  
Zhongxiang Peng ◽  
Jidong Zhang ◽  
Yunfeng Deng ◽  
...  
2007 ◽  
Vol 40 (13) ◽  
pp. 4578-4585 ◽  
Author(s):  
Mohit Singh ◽  
Omolola Odusanya ◽  
Gregg M. Wilmes ◽  
Hany B. Eitouni ◽  
Enrique D. Gomez ◽  
...  

1998 ◽  
Vol 548 ◽  
Author(s):  
M. Litt ◽  
R. Ameri ◽  
Y. Wang ◽  
R. Savinell ◽  
J. Wainwright

ABSTRACTPoly (2,2'-(m-phenylene) 5,5'-bibenzimidazole), PBI and poly (2,5-benzimidazole), ABPBI, were cast into films and doped with phosphoric acid. Their mechanical properties were studied as a function of inherent viscosity and phosphoric acid content. The commercial PBI with an I. V. of 0.8 to 0.9 had relatively low elongation at break. It was fractionated; the higher the inherent viscosity the higher the modulus and elongation. At low phosphoric acid doping the modulus rose because a crystalline phase developed, and then dropped as more phosphoric acid was added. A second doping method produced films with high crystallinity and higher conductivity (0.02-.03 vs. 0.06-.08 S/cm) but poorer elongation than those made by doping a cast film in phosphoric acid. In order to get higher molecular weight films that could have better mechanical properties, we decided to polymerize 3,4-diaminobenzoic acid to ABPBI, an AB polymer for which I. V.'s of∼16 have been reported. After learning how to purify and polymerize the monomer, I. V.'s of 6–8 were easily obtained. Conductivities of the doped ABPBI films were as high as those of the best PBI films. With their high viscosities, the ABPBI films were much tougher and had better elongation than the doped PBI films.


2014 ◽  
Vol 8 (1) ◽  
pp. 1457-1463
Author(s):  
Salah Abdulla Hasoon

Novel electrically conducting polymeric materials are prepared in this work. Polythiophene (PT) and poly (3-Methelthiophene) (P3MT) films were prepared by electro-polymerization method using cyclic voltammetry in acetonitrile as a solvent and lithium tetrafluoroborate as the electrolyte on a gold electrode. Electrical properties of P3MT have been examined in different environments using UV-Vis absorption spectroscopy and quantum mechanical ab initio calculations, The observed absorption peaks at 314 and 415 nm, were attributed to the n-π* and π-π* transitions, respectively in the conjugated polymer chain, in contrast, the observed absorbance peak at 649 nm, is responsible for electric conduction. The temperature dependence of the conductivity can be fitted to the Arrhenius and the VTF equations in different temperature ranges.


2010 ◽  
Vol 35 (1) ◽  
pp. 59-69 ◽  
Author(s):  
Fares Serradj ◽  
Rebal Guemini ◽  
Hichem Farh ◽  
Karim Djemmal

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.


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