Origin of Band-Tail and Deep-Donor States in Cu2ZnSnS4 Solar Cells and Their Suppression through Sn-Poor Composition

2019 ◽  
Vol 10 (24) ◽  
pp. 7929-7936 ◽  
Author(s):  
Suyu Ma ◽  
Hongkai Li ◽  
Jin Hong ◽  
Han Wang ◽  
Xiaoshuang Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Tail ◽  
Deep Donor ◽  
Donor States

scholarly journals How band tail recombination influences the open‐circuit voltage of solar cells

2021 ◽  
Author(s):  
Max Hilaire Wolter ◽  
Romain Carron ◽  
Enrico Avancini ◽  
Benjamin Bissig ◽  
Thomas Paul Weiss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Band Tail

Characterization of the defect density and band tail of an a-Si:H i-layer for solar cells by improved CPM measurements

1994 ◽  
Vol 34 (1-4) ◽  
pp. 541-547 ◽  
Author(s):  
Manabu Sasaki ◽  
Shingo Okamoto ◽  
Yoshihiro Hishikawa ◽  
Shinya Tsuda ◽  
Shoichi Nakano
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Band Tail

DX Centers and III-V Device Performance

1990 ◽  
Vol 184 ◽  
Author(s):  
Elias Muñoz-Merino
Keyword(s):  
Optical Properties ◽  
Low Temperatures ◽  
Thermal Emission ◽  
Systematic Research ◽  
Device Performance ◽  
Dx Centers ◽  
Noise Characteristics ◽  
Deep Donor ◽  
Donor States ◽  
Bipolar Device

ABSTRACTThe properties of deep donor states (DX's centers) in III-V alloys are reviewed in relation to their influence on the device characteristics and limitations. Because of the systematic research being performed on AlGaAs, most of the information presented refers to such material. The electron thermal emission and capture properties of the DX's are then related to the DC and noise characteristics in heterojunction transistors. The optical properties of DX centers indicate a clear difference between unipolar and bipolar device performance at low temperatures. The technical efforts to avoid DX centers will also be described.

Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

2012 ◽  
Vol 733 ◽  
pp. 224-227 ◽  
Author(s):  
Nikolai Yu. Arutynov ◽  
Mohamed Elsayed ◽  
Reinhard Krause-Rehberg ◽  
Valentin V. Emtsev ◽  
Gagik A. Oganesyan ◽  
...  
Keyword(s):  
Activation Energy ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Shallow Donor ◽  
Electrical Measurements ◽  
Positron Annihilation Lifetime ◽  
First Order ◽  
Deep Donor ◽  
Donor States ◽  
Mev Protons

The recovery of shallow donor states of the atoms of phosphorus in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons was studied in the course of isochronal annealing. This process was investigated by the positron annihilation lifetime (PAL) spectroscopy and by low-temperature electrical measurements. The positron traps of a vacancy type manifesting themselves as deep donors have been revealed. These defects begin to anneal at ~ 593 K– 613 K; roughly estimated activation energy of the process is Ea ≈ 0.59 eV under the first order of reaction. The results suggest the involvement, at least, of one vacancy and the impurity atom of phosphorus in the microstructure of the deep donor.

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

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