Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2O

2019 ◽  
Vol 10 (16) ◽  
pp. 4535-4541 ◽  
Author(s):  
Xilong Xu ◽  
Yandong Ma ◽  
Ting Zhang ◽  
Chengan Lei ◽  
Baibiao Huang ◽  
...  
Keyword(s):  
Single Layer ◽  
Nonmetal Atom ◽  
Valley Polarization

scholarly journals 80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111)

2019 ◽  
Vol 123 (23) ◽  
Author(s):  
H. Beyer ◽  
G. Rohde ◽  
A. Grubišić Čabo ◽  
A. Stange ◽  
T. Jacobsen ◽  
...  
Keyword(s):  
Single Layer ◽  
Free Carriers ◽  
Valley Polarization

Prediction of single-layer TiVI6 as a promising two-dimensional valleytronic semiconductor with spontaneous valley polarization

2020 ◽  
Vol 8 (38) ◽  
pp. 13220-13225
Author(s):  
Wenhui Du ◽  
Yandong Ma ◽  
Rui Peng ◽  
Hao Wang ◽  
Baibiao Huang ◽  
...  
Keyword(s):  
Single Layer ◽  
Two Dimensional ◽  
Valley Polarization

Valley polarization spontaneously occurs in single-layer TiVI6 without any additional tuning.

Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarization in single-layer Cr2Se3

2021 ◽  
Vol 104 (7) ◽  
Author(s):  
Zhonglin He ◽  
Rui Peng ◽  
Xiangyu Feng ◽  
Xilong Xu ◽  
Ying Dai ◽  
...  
Keyword(s):  
Single Layer ◽  
Two Dimensional ◽  
Valley Polarization

Valley Polarization in Janus Single-Layer MoSSe via Magnetic Doping

2018 ◽  
Vol 9 (13) ◽  
pp. 3612-3617 ◽  
Author(s):  
Rui Peng ◽  
Yandong Ma ◽  
Shuai Zhang ◽  
Baibiao Huang ◽  
Ying Dai
Keyword(s):  
Single Layer ◽  
Valley Polarization ◽  
Magnetic Doping

Large valley polarization in a novel two-dimensional semiconductor H-ZrX2 (X=Cl, Br, I)

2021 ◽  
Author(s):  
Jiatian Guo ◽  
Zhutong Lu ◽  
Keyu Wang ◽  
Xiuwen Zhao ◽  
Gui-Chao Hu ◽  
...  
Keyword(s):  
Single Layer ◽  
Strain Engineering ◽  
Research Field ◽  
Spin Splitting ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Berry Curvature ◽  
New Class ◽  
Valley Polarization ◽  
Magnetization Orientation

Abstract Inspired by the new progress in the research field of two-dimensional valleytronics materials, we propose a new class of transition metal halides, i.e., H-ZrX2 (X=Cl, Br, I), and investigated their valleytronics properties under the first-principles calculations. It harbors the spin-valley coupling at K and K' points in the top of valence band, in which the valley spin splitting of ZrI2 can reach up to 115 meV. By carrying out the strain engineering, the valley spin splitting and Berry curvature can be effectively tuned. The long-sought valley polarization reaches up to 108 meV by doping Cr atom, which corresponds to the large Zeeman magnetic field of 778T. Furthermore, the valley polarization in ZrX2 can be lineally adjusted or flipped by manipulating the magnetization orientation of the doped magnetic atoms. All the results demonstrate the well-founded application prospects of single-layer ZrX2, which can be considered as great candidate for the development of valleytronics and spintronics.

scholarly journals Intrinsic valley polarization and anomalous valley hall effect in single-layer 2H-FeCl2

ChemPhysMater ◽  
2021 ◽  
Author(s):  
Pei Zhao ◽  
Ying Dai ◽  
Hao Wang ◽  
Baibiao Huang ◽  
Yandong Ma
Keyword(s):  
Hall Effect ◽  
Single Layer ◽  
Valley Polarization ◽  
Valley Hall Effect

scholarly journals Resonance Profiles of Valley Polarization in Single-Layer MoS2 and MoSe2

2018 ◽  
Vol 121 (16) ◽  
Author(s):  
Hans Tornatzky ◽  
Anne-Marie Kaulitz ◽  
Janina Maultzsch
Keyword(s):  
Single Layer ◽  
Valley Polarization

Prediction of Intrinsic Valley Polarization in Single‐Layer GdX 2 (X=Br, Cl) from A First‐Principles Stuty

2021 ◽  
Author(s):  
Feng Ding ◽  
Shilei Ji ◽  
Shasha Li ◽  
Lixia Wang ◽  
Hong Wu ◽  
...  
Keyword(s):  
First Principles ◽  
Single Layer ◽  
Valley Polarization

Crystalline order to a resolution of 4.7 A in the sheath of Methanospirilium hungatii: A cross-beta structure

1984 ◽  
Vol 42 ◽  
pp. 214-215
Author(s):  
Murray Stewart ◽  
T.J. Beveridge ◽  
D. Sprott
Keyword(s):  
Cell Wall ◽  
Single Layer ◽  
Uranyl Acetate ◽  
Optical Diffraction ◽  
Tube Axis ◽  
Basic Subunit ◽  
Beta Structure ◽  
Diffraction Patterns ◽  
Protein Treatment ◽  
General Appearance

The archaebacterium Methanospirillum hungatii has a sheath as part of its cell wall which is composed mainly of protein. Treatment with dithiothreitol or NaOH released the intact sheaths and electron micrographs of this material negatively stained with uranyl acetate showed flattened hollow tubes, about 0.5 μm diameter and several microns long, in which the patterns from the top and bottom were superimposed. Single layers, derived from broken tubes, were also seen and were more simply analysed. Figure 1 shows the general appearance of a single layer. There was a faint axial periodicity at 28.5 A, which was stronger at irregular multiples of 28.5 A (3 and 4 times were most common), and fine striations were also seen at about 3° to the tube axis. Low angle electron diffraction patterns (not shown) and optical diffraction patterns (Fig. 2) from these layers showed a complex meridian (as a result of the irregular nature of the repeat along the tube axis) which showed a clear maximum at 28.5 A, consistent with the basic subunit spacing.

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