Vapor-Deposited Glass Structure Determined by Deposition Rate–Substrate Temperature Superposition Principle

2019 ◽  
Vol 10 (13) ◽  
pp. 3536-3542 ◽  
Author(s):  
Camille Bishop ◽  
Ankit Gujral ◽  
Michael F. Toney ◽  
Lian Yu ◽  
Mark D. Ediger
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Superposition Principle ◽  
Glass Structure ◽  
Temperature Superposition

Integration of Atomistic Simulation with Experiment Using Time−Temperature Superposition for a Cross-Linked Epoxy Network

2019 ◽  
Author(s):  
Ketan Khare ◽  
Frederick R. Phelan Jr.
Keyword(s):  
Master Curve ◽  
Glassy State ◽  
Superposition Principle ◽  
Quantitative Comparison ◽  
Time Shift ◽  
Data Sets ◽  
Epoxy Network ◽  
Temperature Superposition ◽  
Time Temperature Superposition ◽  
Time Temperature Superposition Principle

<a></a><a>Quantitative comparison of atomistic simulations with experiment for glass-forming materials is made difficult by the vast mismatch between computationally and experimentally accessible timescales. Recently, we presented results for an epoxy network showing that the computation of specific volume vs. temperature as a function of cooling rate in conjunction with the time–temperature superposition principle (TTSP) enables direct quantitative comparison of simulation with experiment. Here, we follow-up and present results for the translational dynamics of the same material over a temperature range from the rubbery to the glassy state. Using TTSP, we obtain results for translational dynamics out to 10<sup>9</sup> s in TTSP reduced time – a macroscopic timescale. Further, we show that the mean squared displacement (MSD) trends of the network atoms can be collapsed onto a master curve at a reference temperature. The computational master curve is compared with the experimental master curve of the creep compliance for the same network using literature data. We find that the temporal features of the two data sets can be quantitatively compared providing an integrated view relating molecular level dynamics to the macroscopic thermophysical measurement. The time-shift factors needed for the superposition also show excellent agreement with experiment further establishing the veracity of the approach</a>.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

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