Pentacene Crystal Growth on Silica and Layer-Dependent Step-Edge Barrier from Atomistic Simulations

2018 ◽  
Vol 9 (23) ◽  
pp. 6900-6906 ◽  
Author(s):  
Otello Maria Roscioni ◽  
Gabriele D’Avino ◽  
Luca Muccioli ◽  
Claudio Zannoni
Keyword(s):  
Crystal Growth ◽  
Step Edge ◽  
Atomistic Simulations

scholarly journals Atomistic Simulations of Nonequilibrium Crystal-Growth Kinetics from Alloy Melts

2011 ◽  
Vol 107 (2) ◽  
Author(s):  
Yang Yang ◽  
Harith Humadi ◽  
Dorel Buta ◽  
Brian B. Laird ◽  
Deyan Sun ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Kinetics ◽  
Atomistic Simulations ◽  
Crystal Growth Kinetics

Atomistic simulations of contact area and conductance at nanoscale interfaces

Nanoscale ◽  
2017 ◽  
Vol 9 (43) ◽  
pp. 16852-16857 ◽  
Author(s):  
Xiaoli Hu ◽  
Ashlie Martini
Keyword(s):  
Contact Area ◽  
Graphite Surface ◽  
Step Edge ◽  
Atomistic Simulations ◽  
Nanoscale Interfaces ◽  
Gold Probe

Atomistic simulations were used to study conductance across the interface between a nanoscale gold probe and a graphite surface with a step edge.

scholarly journals The role of step edge diffusion in epitaxial crystal growth

1999 ◽  
Vol 439 (1-3) ◽  
pp. 191-198 ◽  
Author(s):  
S. Schinzer ◽  
M. Kinne ◽  
M. Biehl ◽  
W. Kinzel
Keyword(s):  
Crystal Growth ◽  
Step Edge ◽  
Epitaxial Crystal Growth

Diffusion Processes and Pre-Exponential Factors in Homo-Epitaxial Growth on Ag(100)

1997 ◽  
Vol 492 ◽  
Author(s):  
Ulrike Kürpick ◽  
Talat S. Rahman
Keyword(s):  
Crystal Growth ◽  
Diffusion Coefficients ◽  
Diffusion Processes ◽  
Step Edge ◽  
Many Body ◽  
Self Diffusion ◽  
Adatom Diffusion ◽  
Exchange Processes ◽  
Exponential Factors ◽  
Vibrational Density

ABSTRACTWe provide a recipe for the evaluation of pre–factors for various diffusion processes relevant to crystal growth on Ag(100), based on explicit calculations of appropriate vibrational density of states using realistic many-body interaction potentials. Our calculated diffusion coefficients show that while hopping processes are favored for terrace self-diffusion, exchange processes dominate step-edge diffusion. We also find the characteristics of adatom diffusion along the < 100 >-step-edge to be strikingly different from the < 110 >-step-edge with interesting consequences for interlayer transport on this surface.

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

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