scholarly journals Time-Resolved Kinetic Chirped-Pulse Rotational Spectroscopy in a Room-Temperature Flow Reactor

2017 ◽  
Vol 8 (24) ◽  
pp. 6180-6188 ◽  
Author(s):  
Daniel P. Zaleski ◽  
Lawrence B. Harding ◽  
Stephen J. Klippenstein ◽  
Branko Ruscic ◽  
Kirill Prozument
Keyword(s):  
Room Temperature ◽  
Flow Reactor ◽  
Rotational Spectroscopy ◽  
Time Resolved ◽  
Chirped Pulse

Photophysical properties of N719 and Z907 dyes, benchmark sensitizers for dye-sensitized solar cells, at room and low temperature

2021 ◽  
Vol 23 (10) ◽  
pp. 6182-6189
Author(s):  
Dariusz M. Niedzwiedzki
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Optical Spectroscopy ◽  
Room Temperature ◽  
Photophysical Properties ◽  
Dye Sensitized Solar Cells ◽  
Time Resolved ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Photophysical properties of N719 and Z907, benchmark Ru-dyes used as sensitizers in dye-sensitized solar cells, were studied by static and time-resolved optical spectroscopy at room temperature and 160 K.

scholarly journals Photooxidation and Photobleaching of Single CdSe/ZnS Quantum Dots Probed by Room-Temperature Time-Resolved Spectroscopy

2001 ◽  
Vol 105 (35) ◽  
pp. 8281-8284 ◽  
Author(s):  
Wilfried G. J. H. M. van Sark ◽  
Patrick L. T. M. Frederix ◽  
Dave J. Van den Heuvel ◽  
Hans C. Gerritsen ◽  
Ageeth A. Bol ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Temperature Time

Uniform Supersonic Flow Sampling for Detection by Chirped-Pulse Rotational Spectroscopy

2021 ◽  
Author(s):  
Ranil M Gurusinghe ◽  
Nureshan Dias ◽  
Ritter Krueger ◽  
Arthur G. Suits
Keyword(s):  
Supersonic Flow ◽  
Rotational Spectroscopy ◽  
Chirped Pulse

scholarly journals Ultrafast manipulation of mirror domain walls in a charge density wave

2018 ◽  
Vol 4 (10) ◽  
pp. eaau5501 ◽  
Author(s):  
Alfred Zong ◽  
Xiaozhe Shen ◽  
Anshul Kogar ◽  
Linda Ye ◽  
Carolyn Marks ◽  
...  
Keyword(s):  
Charge Density ◽  
Charge Density Wave ◽  
Room Temperature ◽  
Domain Walls ◽  
Density Wave ◽  
Charge Ordering ◽  
Time Resolved ◽  
Insulator Metal Transition ◽  
Femtosecond Light Pulse ◽  
A Charge

Domain walls (DWs) are singularities in an ordered medium that often host exotic phenomena such as charge ordering, insulator-metal transition, or superconductivity. The ability to locally write and erase DWs is highly desirable, as it allows one to design material functionality by patterning DWs in specific configurations. We demonstrate such capability at room temperature in a charge density wave (CDW), a macroscopic condensate of electrons and phonons, in ultrathin 1T-TaS2. A single femtosecond light pulse is shown to locally inject or remove mirror DWs in the CDW condensate, with probabilities tunable by pulse energy and temperature. Using time-resolved electron diffraction, we are able to simultaneously track anti-synchronized CDW amplitude oscillations from both the lattice and the condensate, where photoinjected DWs lead to a red-shifted frequency. Our demonstration of reversible DW manipulation may pave new ways for engineering correlated material systems with light.

scholarly journals Serial femtosecond and serial synchrotron crystallography yield data of equivalent quality: a systematic comparison

2020 ◽  
Author(s):  
P. Mehrabi ◽  
R. Bücker ◽  
G. Bourenkov ◽  
H.M. Ginn ◽  
D. von Stetten ◽  
...  
Keyword(s):  
Radiation Source ◽  
Room Temperature ◽  
Delivery Device ◽  
Analysis Software ◽  
Yield Data ◽  
Time Resolved ◽  
Systematic Comparison ◽  
Figures Of Merit ◽  
Radiation Sources ◽  
Data Statistics

AbstractFor the two proteins myoglobin (MB) and fluoroacetate dehalogenase (FAcD), we present a systematic comparison of crystallographic diffraction data collected by serial femtosecond (SFX) and serial synchrotron crystallography (SSX). To maximize comparability, we used the same batch of crystals, the same sample delivery device, as well as the same data analysis software. Overall figures of merit indicate that the data of both radiation sources are of equivalent quality. For both proteins reasonable data statistics can be obtained with approximately 5000 room temperature diffraction images irrespective of the radiation source. The direct comparability of SSX and SFX data indicates that diffraction quality is rather linked to the properties of the crystals than to the radiation source. Time-resolved experiments can therefore be conducted at the source that best matches the desired time-resolution.

scholarly journals Влияние условий роста и уровня легирования на кинетику люминесценции слоев Ge : Sb, выращенных на кремнии

2020 ◽  
Vol 54 (7) ◽  
pp. 685
Author(s):  
Д.В. Юрасов ◽  
Н.А. Байдакова ◽  
А.Н. Яблонский ◽  
А.В. Новиков
Keyword(s):  
Doping Level ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Growth Conditions ◽  
Published Data ◽  
Rapid Thermal Anneal ◽  
Time Resolved ◽  
Light Emitting ◽  
Pl Intensity ◽  
Time Resolved Photoluminescence

Light-emitting properties of Ge-on-Si(001) layers doped by Sb were studied by stationary and time-resolved photoluminescence (PL) at room temperature. It was obtained that the PL intensity of n-Ge/Si(001) structures is maximized when the doping level is close to the equilibrium solubility of Sb in Ge (~1019 cm-3) which is in accordance with the previously published data. Time-resolved studies of the direct-related PL signal have shown that both the donor density and the growth conditions of doped layer, in particular, the growth temperature influence the PL kinetics. It was obtained that the increase of doping level leads to the decrease of the characteristic carrier lifetime. Moreover, usage of low growth temperatures which is needed to form the doped n-Ge layers also results in shortening of the carrier lifetime as compared with Ge layers grown at high temperatures. It was found that rapid thermal anneal at proper conditions could partially compensate the above mentioned detrimental effects and lead to the increase of both the PL intensity and carrier lifetime.

On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures

2012 ◽  
Vol 711 ◽  
pp. 159-163 ◽  
Author(s):  
Patrik Ščajev ◽  
Pavels Onufrijevs ◽  
Georgios Manolis ◽  
Mindaugas Karaliūnas ◽  
Saulius Nargelas ◽  
...  
Keyword(s):  
Room Temperature ◽  
Defect Density ◽  
Growth Conditions ◽  
Free Carrier ◽  
Band Edge Emission ◽  
Free Carrier Absorption ◽  
Free Standing ◽  
Optical Techniques ◽  
Time Resolved ◽  
Photoelectrical Properties

We applied a number of time-resolved optical techniques for investigation of optical and photoelectrical properties of cubic SiC grown by different technologies on different substrates. The excess carriers were injected by a short laser pulse and their dynamics was monitored by free-carrier absorption, light-induced transient grating, and photoluminescence techniques in a wide excitation range. Combining an optical and electrical probe beam delay, we found that free carrier lifetimes in differently grown layers vary from few ns up to 20 μs. Temperature dependences of carrier diffusivity and lifetime revealed a pronounced carrier trapping in thin sublimation grown layers. In free-standing layers and thick sublimation layers, the ambipolar mobility was found the highest (120 cm2/Vs at room temperature). A linear correlation between the room-temperature band edge emission and carrier lifetime in differently grown layers was attributed to defect density, strongly dependent on the used growth conditions.

scholarly journals Ultrafast dynamics of a bi-stable azopyridine Ni-porphyrin spin switch after photoexcitation in the porphyrin B-bands

2019 ◽  
Vol 205 ◽  
pp. 05019
Author(s):  
Sebastian Megow ◽  
Julia Bahrenburg ◽  
Mark Dittner ◽  
Birthe Kohly ◽  
Joachim Gripp ◽  
...  
Keyword(s):  
High Spin ◽  
Room Temperature ◽  
Ultrafast Dynamics ◽  
Time Resolved ◽  
Spin Switch ◽  
Absorption Measurements

Femtosecond time-resolved absorption measurements of a magnetically bi-stable azopyridine Ni-porphyrin in solution at room temperature show that the photo-induced dynamics are dominated by transient low-spin ⇄ high-spin interconversion involving Ni (d2) and (d, d) states.

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