Dynamics of Charged Excitons and Biexcitons in CsPbBr3 Perovskite Nanocrystals Revealed by Femtosecond Transient-Absorption and Single-Dot Luminescence Spectroscopy

2017 ◽  
Vol 8 (7) ◽  
pp. 1413-1418 ◽  
Author(s):  
Naoki Yarita ◽  
Hirokazu Tahara ◽  
Toshiyuki Ihara ◽  
Tokuhisa Kawawaki ◽  
Ryota Sato ◽  
...  
Nanoscale ◽  
2018 ◽  
Vol 10 (2) ◽  
pp. 639-645 ◽  
Author(s):  
Navendu Mondal ◽  
Apurba De ◽  
Anunay Samanta

Harvesting of hot electrons and biexcitons from CdTe quantum dots by all-inorganic perovskite nanocrystals is demonstrated through femtosecond transient absorption measurements.


2021 ◽  
pp. 100016
Author(s):  
Naga Krishnakanth Katturi ◽  
Chinmoy Biswas ◽  
Nagarjuna Kommu ◽  
Sai Santosh Kumar Raavi ◽  
Venugopal Rao Soma

Author(s):  
Junjie Chen ◽  
Sen Guo ◽  
Dabin Lin ◽  
Zhaogang Nie ◽  
Chung-Che Huang ◽  
...  

Femtosecond transient absorption spectroscopy has been employed to unravel separate initial nonequilibrium dynamic process of photo-injected electrons and holes during the formation process of the lowest excitons at the K-valley...


Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 49
Author(s):  
Xiangyang Li ◽  
Zongpeng Song ◽  
Huancheng Zhao ◽  
Wenfei Zhang ◽  
Zhenhua Sun ◽  
...  

In recent years, using two-dimensional (2D) materials to realize broadband photodetection has become a promising area in optoelectronic devices. Here, we successfully synthesized SnSe nanosheets (NSs) by a facile tip ultra-sonication method in water-ethanol solvent which was eco-friendly. The carrier dynamics of SnSe NSs was systematically investigated via a femtosecond transient absorption spectroscopy in the visible wavelength regime and three decay components were clarified with delay time of τ1 = 0.77 ps, τ2 = 8.3 ps, and τ3 = 316.5 ps, respectively, indicating their potential applications in ultrafast optics and optoelectronics. As a proof-of-concept, the photodetectors, which integrated SnSe NSs with monolayer graphene, show high photoresponsivities and excellent response speeds for different incident lasers. The maximum photo-responsivities for 405, 532, and 785 nm were 1.75 × 104 A/W, 4.63 × 103 A/W, and 1.52 × 103 A/W, respectively. The photoresponse times were ~22.6 ms, 11.6 ms, and 9.7 ms. This behavior was due to the broadband light response of SnSe NSs and fast transportation of photocarriers between the monolayer graphene and SnSe NSs.


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