Limits of Carrier Diffusion in n-Type and p-Type CH3NH3PbI3 Perovskite Single Crystals

2016 ◽  
Vol 7 (17) ◽  
pp. 3510-3518 ◽  
Author(s):  
Octavi E. Semonin ◽  
Giselle A. Elbaz ◽  
Daniel B. Straus ◽  
Trevor D. Hull ◽  
Daniel W. Paley ◽  
...  
2017 ◽  
Vol 8 (24) ◽  
pp. 6092-6093
Author(s):  
Octavi E. Semonin ◽  
Giselle A. Elbaz ◽  
Daniel B. Straus ◽  
Trevor D. Hull ◽  
Daniel W. Paley ◽  
...  

2021 ◽  
pp. 2001003
Author(s):  
Zuoxiang Xie ◽  
Kai Feng ◽  
Yan Xiong ◽  
Xu Chen ◽  
Yudong Liang ◽  
...  

2005 ◽  
Vol 297-300 ◽  
pp. 875-880
Author(s):  
Cheol Ho Lim ◽  
Ki Tae Kim ◽  
Yong Hwan Kim ◽  
Dong Choul Cho ◽  
Young Sup Lee ◽  
...  

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.


2016 ◽  
Vol 6 (6) ◽  
pp. 1663-1667 ◽  
Author(s):  
Tursun Ablekim ◽  
Santosh K. Swain ◽  
Jedidiah McCoy ◽  
Kelvin G. Lynn
Keyword(s):  

1980 ◽  
Vol 19 (2) ◽  
pp. 307-315 ◽  
Author(s):  
Kunihiko Kodama ◽  
Tatsuya Niimi

1978 ◽  
pp. 691-696
Author(s):  
G.A. Medvedkin ◽  
Yu.V. Rud ◽  
Yu.A. Valov ◽  
V.I. Sokolova
Keyword(s):  

1989 ◽  
Vol 161 ◽  
Author(s):  
V.K. Madhu Smitha Rani ◽  
R.P. Vijayalakshmi ◽  
D. Raja Reddy ◽  
B.K. Reddy

ABSTRACTThe titlematerial is one of the least studied among the II-VI alloy systems. So far it has not been possible to prepare ZnTe in n-type and CdSe in p-type with appreciable conductivities. Moreover ZnTe crystallises in zincblende whereas CdSe crystallises in wurtzite structure. Because of the varied nature of the end compounds, an attempt has been made to prepare single crystals of (ZnTe)x(CdSe)1−x in the entire range of ‘x’. The alloy material in the entire range Xof composition in the single crystalline form was grown by a modified Piper-Plich method. The grown crystals of this alloy system have been subjected to chemical analysis. DTA and DTG studies carried out on these alloys did not show any phasec transitions. However two exothermic peaks associated with increase in mass were noticed. This has been attributed to oxidation effects of Se/Te or Cd/Zn. XRD data though showed some regularity near end compositions there is still some ambiguity for the middle compositions. Energy gap obtained from reflection spectra and also photocurrent spectral response showed bowing. However, there is a marked different feature at one of the end regions. The growth and the results of all the above mentioned investigations are presented and discussed in this paper.


2008 ◽  
Vol 368-372 ◽  
pp. 553-555
Author(s):  
H.F. Wang ◽  
Ke Feng Cai ◽  
H. Li ◽  
L. Wang ◽  
X.L. Li

Ba8Ga16Ge30 clathrate material has being intensely investigated as a candidate of promising thermoelectric materials. In this work, Ba8Ga16+xSbxGe30-2x (x=0,1) single crystals have been synthesized by the Ga flux method, using high purity elemental Ba, Sb, Ga, and Ge as starting materials. Powder X-ray diffraction, Scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy and Raman spectroscopy were used to characterize the single crystals. Seebeck coefficient of the crystals was measured from 300 to 800 K. The result indicates that the crystals are p-type semiconductor, which is different from the crystals synthesized by the Czochralski method. The Seebeck coefficient almost does not change after doping Sb in the whole temperature measured and it is in the range of 200 to 300μV/K.


1997 ◽  
Vol 478 ◽  
Author(s):  
T. M. Tritt ◽  
M. L. Wilson ◽  
R. L. Littleton ◽  
C. Feger ◽  
J. Kolis ◽  
...  

AbstractWe have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe5 and ZrTe5. We have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, Tp where Tp ≈ 80K for HfTe5 and Tp ≈ 145K for ZrTe5. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. This data is similar to behavior observed previously in these materials. We have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe5 and ZrTe5. We have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 μV/K and +65 μV/K for HfTe5 and ZrTe5 respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 μV/K for HfTe5 and +35 μV/K for ZrTe5. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T ≈ 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 mΩ-cm and 24 mΩ-cm for Hfre5 and ZrTe5 respectively, compared to single crystal values of 0.35 mΩ-cm (HfTe5) and 1.0 mΩ-cm (ZrTe5). We have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. We will discuss these materials in relation to their potential as candidates for thermoelectric applications.


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