Pressure-Induced Superionicity of H– in Hypervalent Sodium Silicon Hydrides

2021 ◽  
pp. 7166-7172
Author(s):  
Tianxiao Liang ◽  
Zihan Zhang ◽  
Hongyu Yu ◽  
Tian Cui ◽  
Xiaolei Feng ◽  
...  
Keyword(s):  
Silicon Hydrides

scholarly journals Ternary hypervalent silicon hydrides via lithium at high pressure

2020 ◽  
Vol 4 (11) ◽  
Author(s):  
Tianxiao Liang ◽  
Zihan Zhang ◽  
Xiaolei Feng ◽  
Haojun Jia ◽  
Chris J. Pickard ◽  
...  
Keyword(s):  
High Pressure ◽  
Silicon Hydrides

γ-Ray Initiated Reactions. II. The Addition of Silicon Hydrides to Alkenes1

1958 ◽  
Vol 80 (7) ◽  
pp. 1737-1739 ◽  
Author(s):  
A. M. El-Abbady ◽  
Leigh C. Anderson
Keyword(s):  
Silicon Hydrides ◽  
Γ Ray

Gas Source Silicon Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
H. Hirayama ◽  
M. Hiroi ◽  
K. Koyama ◽  
T. Tatsumi ◽  
M. Sato
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Molecular Beam ◽  
Hydrogen Desorption ◽  
Dissociative Adsorption ◽  
Molecular Beam Epitaxial ◽  
Gas Source ◽  
Surface Migration ◽  
Micron Size ◽  
Silicon Hydrides

ABSTRACTGas source silicon molecular beam epitaxial (Si-MBE) growth is microscopically governed by a disociative adsorption of silicon hydrides, such as Si2H6 source gas molecules on Si surface. The dissociative adsorption generates SiH species on the surface. From this hydride phase, hydrogen desorbs thermaly. The temperature dependence of the growth rate indicated that the hydrogen desorption from the SiH is the rate limiting step. In HBO2 Knudsen cell doping, B adsorbates block the surface migration. Such a blocking effect can be avoided by B2H6 gas dopant, because of the similar incorpration mechanism of B2H6 to that of Si2H6. However, in PH3 gas doping, a crystal quality degradation was observed at a high doping range due to the preferentially high sticking coefficient of PH3 and the resulting surface dangling bond termination. The selective epitaxial growth of a B doped layer using Si2H6 and B2H6 was applied to a novel structured base fabrication for super self-aligned selectively grown base transistor (SSSBT). A successful achievement of the SSSBT fabrication indicates the high potentiality of gas source Si-MBE to the sub-micron size ultra-high speed bipolar large scale integrated (LSI) circuits.

A Mild Approach toN-Acylformamidines andC-Acylamidines by the Facile Reduction of Carbodiimides with Pentacoordinated Silicon Hydrides

Synthesis ◽  
1991 ◽  
Vol 1991 (11) ◽  
pp. 954-958 ◽  
Author(s):  
Robert ◽  
J. P. Corriu ◽  
Gérard F. Lanneau ◽  
Myriam Perrot-Petta
Keyword(s):  
Silicon Hydrides

scholarly journals Oxidative addition of silicon hydrides to hydridocarbonyltris(triphenylphosphine)iridium(I)

1969 ◽  
Vol 47 (12) ◽  
pp. 2205-2208 ◽  
Author(s):  
J. F. Harrod ◽  
D. F. R. Gilson ◽  
R. Charles
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Oxidative Addition ◽  
Proton Nuclear Magnetic Resonance ◽  
Iridium Complex ◽  
Thermal Loss ◽  
Silicon Hydride ◽  
Silicon Hydrides ◽  
Nuclear Magnetic

Complexes have been prepared by oxidation of hydridocarbonyltris(triphenylphosphine)iridium(I) with a variety of silicon hydrides. The complexes were very stable with respect to thermal loss of either silicon hydride or molecular hydrogen.An unequivocal assignment of stereochemistry of the complexes was obtained from a combination of infrared and proton nuclear magnetic resonance (n.m.r.) techniques. Addition of the silicon hydride to the iridium complex was found to be stereospecifically cis.

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