Influence of the Cation on the Surface Electronic Band Structure and Magnetic Properties of Mn:ZnS and Mn:CdS Quantum Dot Thin Films

2019 ◽  
Vol 123 (40) ◽  
pp. 24890-24898 ◽  
Author(s):  
Andrew J. Yost ◽  
Thilini K. Ekanayaka ◽  
Gautam Gurung ◽  
Gaurab Rimal ◽  
Sabit Horoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Quantum Dot ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

First-principles studies of the elastic and magnetic properties of monolayer CrN

2021 ◽  
Author(s):  
Tai Ma ◽  
Jia Wang ◽  
Xu Li ◽  
Min Pu
Keyword(s):  
Magnetic Properties ◽  
Band Structure ◽  
First Principles ◽  
Electronic Band Structure ◽  
Strain Analysis ◽  
Exchange Interactions ◽  
Potential Method ◽  
Graphene Monolayer ◽  
Electronic Band ◽  
Spin Electronics

Two-dimensional (2D) materials with robust ferromagnetism properties have high potentials for application in the field of spintronics. However, extensively pursued 2D sheets, including pure graphene, monolayer BN, and layered transition metal dichalcogenides, are either nonmagnetic or weakly magnetic. The elastic, electronic and magnetic properties of monolayer CrN are calculated using the plane wave pseudo potential method based on first-principles density function theory. Upon determining through calculation that the structure of the monolayer CrN nanosheet is stable, its layer modulus [Formula: see text] shows that its strain resistance is stronger than that of graphene. Through strain analysis, materials with a monolayer CrN type of structure can be obtained. It is determined that 10% of the change in equilibrium area is still applicable to the 2D EOS, showing that this structure is quite stable. The spin-polarized electronic band structure is also calculated under different plane symmetry strains. The plane strain can be used to effectively adjust the metallic and magnetic properties of the material. Analyses of the band structure and density of states reveal that this material is half-metallic, where the origin of the ferromagnetism is related to [Formula: see text]–[Formula: see text] exchange interactions between the Cr and N atoms. Monolayer CrN has semimetallic properties and strong ferromagnetic (FM) properties. The FM effect can enhance the stability of the material. The results show that monolayer CrN is a semimetallic material with good elastic properties and a strong FM property. This material is therefore expected to have good application rospects in the field of spin electronics.

Critical role of {002} preferred orientation on electronic band structure of electrodeposited monoclinic WO3 thin films

2018 ◽  
Vol 2 (10) ◽  
pp. 2224-2236 ◽  
Author(s):  
Wai Ling Kwong ◽  
Pramod Koshy ◽  
Judy N. Hart ◽  
Wanqiang Xu ◽  
Charles C. Sorrell
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Oxygen Vacancies ◽  
Electronic Band Structure ◽  
Critical Role ◽  
Preferred Orientation ◽  
Electronic Band ◽  
Wo3 Thin Films

Decoupled effects of crystallographic {002} orientation and oxygen vacancies on the electronic band structure of monoclinic WO3 films.

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

Microstructure, optical property, and electronic band structure of cuprous oxide thin films

2011 ◽  
Vol 110 (10) ◽  
pp. 103503 ◽  
Author(s):  
Jun-Woo Park ◽  
Hyungkeun Jang ◽  
Sung Kim ◽  
Suk-Ho Choi ◽  
Hosun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Band Structure ◽  
Cuprous Oxide ◽  
Electronic Band Structure ◽  
Oxide Thin Films ◽  
Electronic Band

scholarly journals Dielectric functions and electronic band structure of lead zirconate titanate thin films

2005 ◽  
Vol 98 (9) ◽  
pp. 094108 ◽  
Author(s):  
Hosun Lee ◽  
Youn Seon Kang ◽  
Sang-Jun Cho ◽  
Bo Xiao ◽  
Hadis Morkoç ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Lead Zirconate Titanate ◽  
Electronic Band Structure ◽  
Lead Zirconate ◽  
Electronic Band ◽  
Zirconate Titanate

Crystal order in pentacene thin films grown on SiO2 and its influence on electronic band structure

2011 ◽  
Vol 12 (1) ◽  
pp. 195-201 ◽  
Author(s):  
R. Matsubara ◽  
M. Sakai ◽  
K. Kudo ◽  
N. Yoshimoto ◽  
I. Hirosawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band
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