Superior-Performance Aqueous Zinc Ion Battery Based on Structural Transformation of MnO2 by Rare Earth Doping

2019 ◽  
Vol 123 (37) ◽  
pp. 22735-22741 ◽  
Author(s):  
Jianwei Wang ◽  
Xiaolei Sun ◽  
Hongyang Zhao ◽  
Lingling Xu ◽  
Jiale Xia ◽  
...  
2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Shouxiang Ding ◽  
Mingzheng Zhang ◽  
Runzhi Qin ◽  
Jianjun Fang ◽  
Hengyu Ren ◽  
...  

AbstractRecent years have witnessed a booming interest in grid-scale electrochemical energy storage, where much attention has been paid to the aqueous zinc ion batteries (AZIBs). Among various cathode materials for AZIBs, manganese oxides have risen to prominence due to their high energy density and low cost. However, sluggish reaction kinetics and poor cycling stability dictate against their practical application. Herein, we demonstrate the combined use of defect engineering and interfacial optimization that can simultaneously promote rate capability and cycling stability of MnO2 cathodes. β-MnO2 with abundant oxygen vacancies (VO) and graphene oxide (GO) wrapping is synthesized, in which VO in the bulk accelerate the charge/discharge kinetics while GO on the surfaces inhibits the Mn dissolution. This electrode shows a sustained reversible capacity of ~ 129.6 mAh g−1 even after 2000 cycles at a current rate of 4C, outperforming the state-of-the-art MnO2-based cathodes. The superior performance can be rationalized by the direct interaction between surface VO and the GO coating layer, as well as the regulation of structural evolution of β-MnO2 during cycling. The combinatorial design scheme in this work offers a practical pathway for obtaining high-rate and long-life cathodes for AZIBs.


1995 ◽  
Vol 415 ◽  
Author(s):  
Oliver Just ◽  
Anton C. Greenwald ◽  
William S. Rees

ABSTRACTThe homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.


2018 ◽  
Vol 124 (9) ◽  
Author(s):  
Yue Fang ◽  
Jihui Lang ◽  
Jiaying Wang ◽  
Qiang Han ◽  
Zhe Zhang ◽  
...  

1998 ◽  
Vol 302 (2-3) ◽  
pp. 207-214 ◽  
Author(s):  
A.C. Meltzow ◽  
S. Altmeyer ◽  
H. Kurz ◽  
N.D. Zakharov ◽  
S. Senz ◽  
...  

CCS Chemistry ◽  
2021 ◽  
pp. 1-19
Author(s):  
Xun Liu ◽  
Shangqing Zhang ◽  
Jinhui Liu ◽  
Xing Wei ◽  
Ting Yang ◽  
...  

2012 ◽  
Vol 135 (2-3) ◽  
pp. 416-424 ◽  
Author(s):  
De-Long Zhang ◽  
Wen-Zhu Zhang ◽  
Jian Gao ◽  
Ping-Rang Hua ◽  
Bei Chen ◽  
...  

2019 ◽  
Vol 2019 ◽  
pp. 1-11 ◽  
Author(s):  
Angelika Wrzesinska ◽  
Alexander Khort ◽  
Izabela Bobowska ◽  
Adam Busiakiewicz ◽  
Aleksandra Wypych-Puszkarz

In this study, nanocrystalline (18–28 nm) perovskite-like bismuth ferrite rare earth-doped powders (Bi0.9RE0.1FeO3, where RE = La (BLaFO), Eu (BEuFO), and Er (BErFO)) were obtained by microwave-assisted modification of solution combustion synthesis (SCS). The influence of high load La3+, Eu3+, and Er3+ doping on structural, optical, and electrical properties of BiFeO3 was investigated. It was found that rare earth doping along with fast phase formation and quenching significantly distorts the crystal cells of the obtained materials, which results in the formation of mixed rhombohedral- (R3c-) orthorhombic (Pbnm) crystal structures with decreased lengths of Bi-O and Fe-O bonds along with a decreasing radius size of doping ions. This promotes reduction of the optical band gap energy and suppression of ionic polarization at high frequencies and results in enhanced dielectric permittivity of the materials at 1 MHz.


2020 ◽  
Vol 7 (23) ◽  
pp. 4669-4676
Author(s):  
Lingjun He ◽  
Junling Meng ◽  
Jing Feng ◽  
Xiaojuan Liu ◽  
Hongjie Zhang

The types of electronic transitions in the lanthanide-activated CsPbBr3:RE family.


2020 ◽  
Vol 837 ◽  
pp. 155563
Author(s):  
Yu Anbo ◽  
Xia Tian ◽  
Sun Liping ◽  
Li Qiang ◽  
Huo Lihua ◽  
...  

2020 ◽  
Vol 842 ◽  
pp. 155859 ◽  
Author(s):  
I.I. Makoed ◽  
N.A. Liedienov ◽  
A.V. Pashchenko ◽  
G.G. Levchenko ◽  
D.D. Tatarchuk ◽  
...  

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