Quantitative Visualization of Topology and Morphing of Percolation Path in Nanoparticle Network Array Exhibiting Coulomb Blockade at Room Temperature

2019 ◽  
Vol 123 (32) ◽  
pp. 19999-20005
Author(s):  
Peter Wilson ◽  
Jason K. Y. Ong ◽  
Abhijeet Prasad ◽  
Ravi F. Saraf
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Percolation Path ◽  
Quantitative Visualization

Low Voltage Nonlinear Conductance of Gold Nanowires: Room Temperature Coulomb Blockade Effect?

1998 ◽  
pp. 1-10 ◽  
Author(s):  
J. L. Costa-Krämer ◽  
N. Garcia ◽  
M. Jonson ◽  
I. V. Krive ◽  
H. Olin ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Low Voltage ◽  
Gold Nanowires ◽  
Nonlinear Conductance

Room-temperature Coulomb-blockade-dominated transport in gold nanocluster structures

1998 ◽  
Vol 13 (8A) ◽  
pp. A111-A114 ◽  
Author(s):  
L Clarke ◽  
M N Wybourne ◽  
L O Brown ◽  
J E Hutchison ◽  
M Yan ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Gold Nanocluster

Study of Electrical Properties of Ge-Nanocrystalline Films Deposited by Cluster-Beam Evaporation Technique

1998 ◽  
Vol 536 ◽  
Author(s):  
Souri Banedjee ◽  
H. Ono ◽  
S. Nozaki ◽  
H. Morisaki
Keyword(s):  
Electrical Properties ◽  
Liquid Nitrogen ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Liquid Nitrogen Temperature ◽  
Cluster Beam ◽  
Nanocrystalline Films ◽  
Current Voltage ◽  
Evaporation Technique

AbstractRoom temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.

Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature

2017 ◽  
Vol 26 (12) ◽  
pp. 1750201
Author(s):  
Hamed Aminzadeh ◽  
Mohammad Ali Dashti ◽  
Mohammad Miralaei
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Symmetric Functions ◽  
Single Electron ◽  
Stable Operation ◽  
Single Electron Transistors ◽  
Analog To Digital ◽  
Temperature Range ◽  
Electron Transistors

Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb blockade regime covers effectively the higher temperature range. Si QD-based SETs are also fully compatible with advanced CMOS technology and they can be manufactured using routine nanofabrication steps. At first, we present the principles of operation of Si SETs used for room-temperature operation. Possible flash-type ADC architectures are then investigated and the design considerations of possible Coulomb oscillation regimes are addressed. A modified design procedure is then introduced for [Formula: see text]-bit SET-based ADCs, and validated through simulation of a 3-bit ADC with a sampling frequency of 5 GS/s. The ADC core is comprised from a capacitive signal divider followed by three periodic symmetric functions (PSFs). Simulation results demonstrate the stability of output signals at the room-temperature range.

Room temperature Coulomb blockade mediated field emission via self-assembled gold nanoparticles

2017 ◽  
Vol 381 (5) ◽  
pp. 476-480 ◽  
Author(s):  
Fei Wang ◽  
Jingyue Fang ◽  
Shengli Chang ◽  
Shiqiao Qin ◽  
Xueao Zhang ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Field Emission ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Self Assembled
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