scholarly journals Room-Temperature Electron Transport in Self-Assembled Sheets of PbSe Nanocrystals with a Honeycomb Nanogeometry

2019 ◽  
Vol 123 (22) ◽  
pp. 14058-14066 ◽  
Author(s):  
Maryam Alimoradi Jazi ◽  
Aditya Kulkarni ◽  
Sophia Buhbut Sinai ◽  
Joep L. Peters ◽  
Eva Geschiere ◽  
...  
Keyword(s):  
Electron Transport ◽  
Room Temperature ◽  
Temperature Electron ◽  
Self Assembled

Experimental Characterization and Modeling of InP-based Microcoolers

2003 ◽  
Vol 793 ◽  
Author(s):  
Rajeev Singh ◽  
Daryoosh Vashaee ◽  
Yan Zhang ◽  
Million Negassi ◽  
Ali Shakouri ◽  
...  
Keyword(s):  
Electron Transport ◽  
Low Temperature ◽  
Room Temperature ◽  
Theoretical Models ◽  
Experimental Results ◽  
Device Performance ◽  
Barrier Layers ◽  
Energy Filtering ◽  
Superlattice Structure ◽  
Temperature Electron

ABSTRACTWe present experimental and theoretical characterization of InP-based heterostructure integrated thermionic (HIT) coolers. In particular, the effect of doping on overall device performance is characterized. Several thin-film cooler devices have been fabricated and analyzed. The coolers consist of a 1μm thick superlattice structure composed of 25 periods of InGaAs well and InGaAsP (λgap ≈ 1.3μm) barrier layers 10 and 30nm thick, respectively. The superlattice is surrounded by highly-doped InGaAs layers that serve as the cathode and anode. All layers are lattice-matched to the n-type InP substrate. N-type doping of the well layers varies from 1.5×1018cm−3 to 8×1018cm−3 between devices, while the barrier layers are undoped. Device cooling performance was measured at room-temperature. Device current-versus-voltage relationships were measured from 45K to room-temperature. Detailed models of electron transport in superlattice structures were used to simulate device performance. Experimental results indicate that low-temperature electron transport is a strong function of well layer doping and that maximum cooling will decrease as this doping is increased. Theoretical models of both I-V curves and maximum cooling agree well with experimental results. The findings indicate that low-temperature electron transport is useful to characterize potential barriers and energy filtering in HIT coolers.

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

Hierarchical nanostructures self-assembled from δ-MnO2 ultrathin nanosheets and Mn3O4 octahedrons for efficient room-temperature HCHO oxidation

2021 ◽  
Author(s):  
Lifang Qi ◽  
Yao Le ◽  
Chao Wang ◽  
Rui Lei ◽  
Tian Wu
Keyword(s):  
Room Temperature ◽  
Hierarchical Nanostructures ◽  
Low Level ◽  
Ultrathin Nanosheets ◽  
Self Assembling ◽  
Formaldehyde Oxidation ◽  
Self Assembled

Self-assembling ultrathin active δ-MnO2 nanosheets and Mn3O4 octahedrons into hierarchical texture enhances room-temperature formaldehyde oxidation at a low-level of Pt.

Single electron transport in samples containing InAs self-assembled dashes and dots

2000 ◽  
Vol 6 (1-4) ◽  
pp. 486-489
Author(s):  
S.I Khondaker ◽  
J.T Nicholls ◽  
W.R Tribe ◽  
D.A Ritchie ◽  
M Pepper
Keyword(s):  
Electron Transport ◽  
Single Electron ◽  
Single Electron Transport ◽  
Self Assembled

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

2021 ◽  
Vol 13 (2) ◽  
pp. 3445-3453
Author(s):  
Wei Huang ◽  
Xinge Yu ◽  
Li Zeng ◽  
Binghao Wang ◽  
Atsuro Takai ◽  
...  
Keyword(s):  
Thin Film ◽  
Ultraviolet Light ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Self Assembled

Enhanced room-temperature ethanol sensing performance of porous MoO3/V0.13Mo0.87O2.935 heterostructures self-assembled with 2D nanosheets

CrystEngComm ◽  
2021 ◽  
Author(s):  
Jia Guo ◽  
Hang Li ◽  
Shushu Chu ◽  
Qi Zhang ◽  
Ziqiong Lin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Self Assembled ◽  
Ethanol Sensing ◽  
2D Nanosheets ◽  
Sensing Performance

Porous MoO3/V0.13Mo0.87O2.935 heterostructures self-assembled with 2D nanosheets have been primarily prepared by a facile method for effectively detecting ethanol at room temperature. V0.13Mo0.87O2.935 phase contributes to the modified microspheres and...

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