Carrier Trap Parameters in NaI with Tl, In, and Eu Dopants

2019 ◽  
Vol 123 (22) ◽  
pp. 13519-13530 ◽  
Author(s):  
S. Gridin ◽  
R. T. Williams ◽  
A. Belsky ◽  
E. Galenin ◽  
A. Gektin ◽  
...  
Keyword(s):  
Carrier Trap

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

scholarly journals Current Tunnelling in MOS Devices with Al2O3/SiO2 Gate Dielectric

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
A. Bouazra ◽  
S. Abdi-Ben Nasrallah ◽  
M. Said ◽  
A. Poncet
Keyword(s):  
Dielectric Constant ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Gate Leakage ◽  
Mos Devices ◽  
High K ◽  
Carrier Trap ◽  
High Dielectric ◽  
Very High ◽  
Tunnelling Current

With the continued scaling of the SiO2 thickness below 2 nm in CMOS devices, a large direct-tunnelling current flow between the gate electrode and silicon substrate is greatly impacting device performance. Therefore, higher dielectric constant materials are desirable for reducing the gate leakage while maintaining transistor performance for very thin dielectric layers. Despite its not very high dielectric constant (∼10), Al2O3 has emerged as one of the most promising high-k candidates in terms of its chemical and thermal stability as its high-barrier offset. In this paper, a theoretical study of the physical and electrical properties of Al2O3 gate dielectric is reported including I(V) and C(V) characteristics. By using a stack of Al2O3/SiO2 with an appropriate equivalent oxide thickness of gate dielectric MOS, the gate leakage exhibits an important decrease. The effect of carrier trap parameters (depth and width) at the Al2O3/SiO2 interface is also discussed.

scholarly journals Development of highly sensitive mechanoluminescent sensor aiming at small strain measurement

2014 ◽  
Vol 04 (02) ◽  
pp. 1450016 ◽  
Author(s):  
Yuki Fujio ◽  
Chao-Nan Xu ◽  
Maiko Nishibori ◽  
Yasutake Teraoka ◽  
Kazutaka Kamitani ◽  
...  
Keyword(s):  
Strain Measurement ◽  
Decomposition Method ◽  
Small Strain ◽  
Solid State Reaction Method ◽  
Synthetic Method ◽  
Strontium Aluminate ◽  
Conventional Solid State Reaction ◽  
Highly Sensitive ◽  
Carrier Trap ◽  
Trap Levels

This paper was focused on the elasticoluminescence (ELS) characteristics, especially a response to small strain (below 1000 μst), of mechanoluminescence (ML) sensor using strontium aluminate doped with small amount of europium ( SrAl 2 O 4: Eu ) synthesized by different methods. By using nitrate decomposition method as a synthetic method of SrAl 2 O 4: Eu , the response to small strain of the ML sensor was enhanced in comparison with using a conventional solid-state reaction method. Based on SEM observation and thermoluminescence (ThL) measurement, we proposed a hypothesis that the sensing characteristic of small strain affect the plate-like shape of SrAl 2 O 4: Eu grain and/or shallower carrier trap levels formed by nitrate decomposition method.

A Gaussian model for recombination via carrier-trap distributions in organic solar cells

2016 ◽  
Vol 15 (3) ◽  
pp. 1103-1109
Author(s):  
L. F. Hernández-García ◽  
O. Ramírez-Sánchez ◽  
V. Cabrera-Arenas ◽  
L. M. Reséndiz-Mendoza
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Gaussian Model ◽  
Carrier Trap

scholarly journals Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6884
Author(s):  
Tomas Ceponis ◽  
Laimonas Deveikis ◽  
Stanislau Lastovskii ◽  
Leonid Makarenko ◽  
Jevgenij Pavlov ◽  
...  
Keyword(s):  
Steady State ◽  
Optical Characteristics ◽  
Particle Detector ◽  
Carrier Capture ◽  
Recombination Lifetime ◽  
Carrier Trapping ◽  
Carrier Recombination ◽  
Barrier Capacitance ◽  
Carrier Trap ◽  
Photo Ionization

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1−xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure.

Impact of strain relaxation on performance of α-formamidinium lead iodide perovskite solar cells

Science ◽  
2020 ◽  
Vol 370 (6512) ◽  
pp. 108-112 ◽  
Author(s):  
Gwisu Kim ◽  
Hanul Min ◽  
Kyoung Su Lee ◽  
Do Yoon Lee ◽  
So Me Yoon ◽  
...  
Keyword(s):  
Solar Cells ◽  
Lattice Strain ◽  
Urbach Energy ◽  
High Efficiency ◽  
Strain Relaxation ◽  
Perovskite Solar Cells ◽  
Lead Iodide ◽  
Α Phase ◽  
Carrier Trap ◽  
Lead Halide

High-efficiency lead halide perovskite solar cells (PSCs) have been fabricated with α-phase formamidinium lead iodide (FAPbI3) stabilized with multiple cations. The alloyed cations greatly affect the bandgap, carrier dynamics, and stability, as well as lattice strain that creates unwanted carrier trap sites. We substituted cesium (Cs) and methylenediammonium (MDA) cations in FA sites of FAPbI3 and found that 0.03 mol fraction of both MDA and Cs cations lowered lattice strain, which increased carrier lifetime and reduced Urbach energy and defect concentration. The best-performing PSC exhibited power conversion efficiency >25% under 100 milliwatt per square centimeter AM 1.5G illumination (24.4% certified efficiency). Unencapsulated devices maintained >80% of their initial efficiency after 1300 hours in the dark at 85°C.

Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers

2006 ◽  
Vol 89 (1) ◽  
pp. 013508 ◽  
Author(s):  
H. F. W. Dekkers ◽  
L. Carnel ◽  
G. Beaucarne
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Carrier Trap
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