Short- and Medium-Range Order in Photothermal Refractive Glass Revealed by Solid-State NMR Techniques

2019 ◽  
Vol 123 (19) ◽  
pp. 12411-12422 ◽  
Author(s):  
Lena Marie Funke ◽  
Oliver Janka ◽  
Rainer Pöttgen ◽  
Leonid Glebov ◽  
Michael Ryan Hansen ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Nmr ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Nmr Techniques

scholarly journals Short and Medium-Range Order in Liquid Ternary Al80Co10Ni10, Al72.5Co14.5Ni13, and Al65Co17.5Ni17.5 Alloys

2010 ◽  
Vol 65 (1-2) ◽  
pp. 123-131 ◽  
Author(s):  
Oleksandr S. Roik ◽  
Oleksiy Samsonnikov ◽  
Volodymyr Kazimirov ◽  
Volodymyr Sokolskii
Keyword(s):  
Three Dimensional ◽  
Range Order ◽  
Ternary Alloys ◽  
X Ray Diffraction ◽  
Medium Range Order ◽  
Intermediate Range Order ◽  
Transition Metal Atoms ◽  
Medium Range ◽  
Three Dimensional Models ◽  
Co Alloys

AbstractA local short-to-intermediate range order of liquid Al80Co10Ni10, Al72.5Co14.5Ni13, and Al65Co17.5Ni17.5 alloys was examined by X-ray diffraction and the reverse Monte Carlo modelling. The comprehensive analysis of three-dimensional models of the liquid ternary alloys was performed by means of the Voronoi-Delaunay method. The existence of a prepeak on the S(Q) function of the liquid alloys is caused by medium range ordering of 3d-transition metal atoms in dense-packed polytetrahedral clusters at temperatures close to the liquidus. The non-crystalline clusters, represented by aggregates of pentagons that consist of good tetrahedra, and chemical short-range order lead to the formation of the medium range order in the liquid binary Al-Ni, Al-Co and ternary Al-Ni-Co alloys.

The Structure of Ion-Implanted Amorphous Silicon

1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson
Keyword(s):  
Amorphous Silicon ◽  
Network Model ◽  
Random Network ◽  
Amorphous Semiconductors ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Large Heat ◽  
Continuous Random Network ◽  
Ion Implanted

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.

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