scholarly journals Size-Dependent Asymmetric Auger Interactions in Plasma-Produced n- and p-Type-Doped Silicon Nanocrystals

2019 ◽  
Vol 123 (9) ◽  
pp. 5782-5789 ◽  
Author(s):  
Rens Limpens ◽  
Gregory F. Pach ◽  
David W. Mulder ◽  
Nathan R. Neale
Keyword(s):  
Silicon Nanocrystals ◽  
Size Dependent ◽  
Doped Silicon ◽  
P Type

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)

2011 ◽  
Vol 58 (5) ◽  
pp. 1302-1310 ◽  
Author(s):  
A Hokazono ◽  
H Itokawa ◽  
N Kusunoki ◽  
I Mizushima ◽  
S Inaba ◽  
...  
Keyword(s):  
Gate Length ◽  
Carbon Doped ◽  
Doped Silicon ◽  
P Type

Doped silicon nanocrystals from organic dopant precursor by a SiCl4-based high frequency nonthermal plasma

2014 ◽  
Vol 105 (18) ◽  
pp. 183110 ◽  
Author(s):  
Shu Zhou ◽  
Yi Ding ◽  
Xiaodong Pi ◽  
Tomohiro Nozaki
Keyword(s):  
High Frequency ◽  
Silicon Nanocrystals ◽  
Nonthermal Plasma ◽  
Doped Silicon ◽  
Dopant Precursor

Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers

2017 ◽  
Vol 178 ◽  
pp. 298-303 ◽  
Author(s):  
A. Mazurak ◽  
R. Mroczyński ◽  
J. Jasiński ◽  
D. Tanous ◽  
B. Majkusiak ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Nanocrystals ◽  
Thin Layers ◽  
Doped Silicon ◽  
Co Doped ◽  
Mis Structures

Synthesis, optical properties and theoretical modelling of discrete emitting states in doped silicon nanocrystals for bioimaging

Nanoscale ◽  
2018 ◽  
Vol 10 (33) ◽  
pp. 15600-15607 ◽  
Author(s):  
B. F. P. McVey ◽  
D. König ◽  
X. Cheng ◽  
P. B. O'Mara ◽  
P. Seal ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Silicon Nanocrystals ◽  
Theoretical Modelling ◽  
Fundamental Interest ◽  
Doped Silicon ◽  
The Creation

The creation of multiple emission pathways in quantum dots (QDs) is an exciting prospect with fundamental interest and optoelectronic potential.

Design guidelines for transition metals as interstitial emitters in silicon nanocrystals to tune photoluminescence properties: zinc as biocompatible example

Nanoscale ◽  
2020 ◽  
Vol 12 (37) ◽  
pp. 19340-19349
Author(s):  
Dirk König ◽  
Richard D. Tilley ◽  
Sean C. Smith
Keyword(s):  
Medical Imaging ◽  
Transition Metal ◽  
Transition Metals ◽  
Silicon Nanocrystals ◽  
Design Guidelines ◽  
Photoluminescence Properties ◽  
Design Rules ◽  
Doped Silicon ◽  
Metal Doped ◽  
Microwave Excitation

General photoluminescence design rules for interstitial transition-metal-doped silicon nanocrystals are derived; Zn shows excellent properties for medical imaging and plasmonic microwave excitation to exactly eliminate marked cells.

Ab Initio Plasmonics of Externally Doped Silicon Nanocrystals

ACS Photonics ◽  
2019 ◽  
Vol 6 (6) ◽  
pp. 1474-1484 ◽  
Author(s):  
Fabio Della Sala ◽  
Maria Pezzolla ◽  
Stefania D’Agostino ◽  
Eduardo Fabiano
Keyword(s):  
Ab Initio ◽  
Silicon Nanocrystals ◽  
Doped Silicon

scholarly journals Erbium-doped silicon nanocrystals grown by r.f. sputtering method: Competition between oxygen and silicon to get erbium

2006 ◽  
Vol 28 (6-7) ◽  
pp. 836-841 ◽  
Author(s):  
M.F. Cerqueira ◽  
M. Stepikhova ◽  
M. Losurdo ◽  
M.M. Giangregorio ◽  
A. Kozanecki ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Erbium Doped ◽  
Doped Silicon

Correlating structure and photophysics in erbium-doped silicon nanocrystals

2002 ◽  
Author(s):  
Jeffrey L. Coffer ◽  
Robert A. Senter ◽  
Junmin Ji
Keyword(s):  
Silicon Nanocrystals ◽  
Erbium Doped ◽  
Doped Silicon
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