In Situ Real-Time Measurements for Ambipolar Channel Formation Processes in Organic Double-Layer Field-Effect Transistors of CuPc and F16CuPc

2018 ◽  
Vol 122 (45) ◽  
pp. 26054-26060 ◽  
Author(s):  
Keitaro Eguchi ◽  
Michio M. Matsushita ◽  
Kunio Awaga
Keyword(s):  
Real Time ◽  
Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Formation Processes ◽  
Channel Formation

Pentacene field-effect transistors by in situ and real time electrical characterization: Comparison between purified and non-purified thin films

2013 ◽  
Vol 534 ◽  
pp. 640-644 ◽  
Author(s):  
Shun-Wei Liu ◽  
Je-Min Wen ◽  
Chih-Chien Lee ◽  
Wei-Cheng Su ◽  
Wei-Lun Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization

Low Temperature Device Processing Technology for II-VI Semiconductors

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Dreifus ◽  
R.M. Kolbas ◽  
B.P. Sneed ◽  
J.F. Schetzina
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Layers ◽  
Processing Technologies ◽  
Device Processing ◽  
Device Structures ◽  
Lift Off ◽  
Processing Steps

ABSTRACTLow temperature (<60° C) processing technologies that avoid potentially damaging processing steps have been developed for devices fabricated from II-VI semiconductor epitaxial layers grown by photoassisted molecular beam epitaxy (MBE). These low temperature technologies include: 1) photolithography (1 µm geometries), 2) calibrated etchants (rates as low as 30 Å/s), 3) a metallization lift-off process employing a photoresist profiler, 4) an interlevel metal dielectric, and 5) an insulator technology for metal-insulator-semiconductor (MIS) structures. A number of first demonstration devices including field-effect transistors and p-n junctions have been fabricated from II-VI epitaxial layers grown by photoassisted MBE and processed using the technology described here. In this paper, two advanced device structures, processed at <60° C, will be presented: 1) CdTe:As-CdTe:In p-n junction detectors, grown in situ by photoassisted MBE, and 2) HgCdTe-HgTe-CdZnTe quantum-well modulation-doped field-effect transistors (MODFETs).

Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors

2018 ◽  
Vol 10 (44) ◽  
pp. 37767-37772 ◽  
Author(s):  
Hyunjin Park ◽  
Hyungju Ahn ◽  
Jimin Kwon ◽  
Seongju Kim ◽  
Sungjune Jung
Keyword(s):  
Double Layer ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

NO2 Detection and Real-Time Sensing with Field-Effect Transistors

2013 ◽  
Vol 26 (1) ◽  
pp. 773-785 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Claudia Piliego ◽  
Ilias Katsouras ◽  
Paul W. M. Blom ◽  
Dago M. de Leeuw
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
No2 Detection

Pulse Dynamics of Electric Double Layer Formation on All-Solid-State Graphene Field-Effect Transistors

2018 ◽  
Vol 10 (49) ◽  
pp. 43166-43176 ◽  
Author(s):  
Ke Xu ◽  
Md Mahbubul Islam ◽  
David Guzman ◽  
Alan C. Seabaugh ◽  
Alejandro Strachan ◽  
...  
Keyword(s):  
Solid State ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Layer Formation ◽  
Pulse Dynamics
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