scholarly journals Electronic Properties of Substitutionally Boron-Doped Graphene Nanoribbons on a Au(111) Surface

2018 ◽  
Vol 122 (28) ◽  
pp. 16092-16099 ◽  
Author(s):  
Eduard Carbonell-Sanromà ◽  
Aran Garcia-Lekue ◽  
Martina Corso ◽  
Guillaume Vasseur ◽  
Pedro Brandimarte ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Graphene Nanoribbons ◽  
Boron Doped ◽  
Doped Graphene

Highly-dispersed boron-doped graphene nanoribbons with enhanced conductibility and photocatalysis

2014 ◽  
Vol 50 (50) ◽  
pp. 6637-6640 ◽  
Author(s):  
Mingyang Xing ◽  
Wenzhang Fang ◽  
Xiaolong Yang ◽  
Baozhu Tian ◽  
Jinlong Zhang
Keyword(s):  
Photocatalytic Activity ◽  
Graphene Nanoribbons ◽  
Activation Method ◽  
Boron Doped ◽  
Highly Dispersed ◽  
Doped Graphene

B-GNRs, prepared by a simple vacuum activation method, have excellent conductivity and photocatalytic activity.

scholarly journals Equibiaxial Strained Oxygen Adsorption on Pristine Graphene, Nitrogen/Boron Doped Graphene, and Defected Graphene

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4945
Author(s):  
Li-Hua Qu ◽  
Xiao-Long Fu ◽  
Chong-Gui Zhong ◽  
Peng-Xia Zhou ◽  
Jian-Min Zhang
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Compressive Strain ◽  
Oxygen Adsorption ◽  
Strain Engineering ◽  
Pristine Graphene ◽  
First Principles Calculations ◽  
Boron Doped ◽  
Calculation Results ◽  
Doped Graphene

We report first-principles calculations on the structural, mechanical, and electronic properties of O2 molecule adsorption on different graphenes (including pristine graphene (G–O2), N(nitrogen)/B(boron)-doped graphene (G–N/B–O2), and defective graphene (G–D–O2)) under equibiaxial strain. Our calculation results reveal that G–D–O2 possesses the highest binding energy, indicating that it owns the highest stability. Moreover, the stabilities of the four structures are enhanced enormously by the compressive strain larger than 2%. In addition, the band gaps of G–O2 and G–D–O2 exhibit direct and indirect transitions. Our work aims to control the graphene-based structure and electronic properties via strain engineering, which will provide implications for the application of new elastic semiconductor devices.

Electronic and Transport Properties of Boron-Doped Graphene Nanoribbons

2007 ◽  
Vol 98 (19) ◽  
Author(s):  
T. B. Martins ◽  
R. H. Miwa ◽  
Antônio J. R. da Silva ◽  
A. Fazzio
Keyword(s):  
Transport Properties ◽  
Graphene Nanoribbons ◽  
Boron Doped ◽  
Doped Graphene

Effects of strain on electronic properties of Delta nitrogen-doped graphene nanoribbons

2018 ◽  
Vol 530 (1) ◽  
pp. 1-10
Author(s):  
Xingxiang Ruan ◽  
Hui Fang ◽  
Fuchun Zhang ◽  
Weihu Zhang
Keyword(s):  
Electronic Properties ◽  
Graphene Nanoribbons ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene

scholarly journals Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint

ACS Nano ◽  
2018 ◽  
Vol 12 (8) ◽  
pp. 7571-7582 ◽  
Author(s):  
Boris V. Senkovskiy ◽  
Dmitry Yu. Usachov ◽  
Alexander V. Fedorov ◽  
Tomas Marangoni ◽  
Danny Haberer ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Graphene Nanoribbons ◽  
Boron Doped ◽  
Doped Graphene
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