Theoretical and Experimental Investigations on Effects of Native Point Defects and Nitrogen Doping on the Optical Band Structure of Spinel ZnGa2O4

2018 ◽  
Vol 122 (10) ◽  
pp. 5509-5517 ◽  
Author(s):  
Yuguo Xia ◽  
Ting Wang ◽  
Xiaozhou Zhao ◽  
Xiuling Jiao ◽  
Dairong Chen
Keyword(s):  
Band Structure ◽  
Point Defects ◽  
Nitrogen Doping ◽  
Experimental Investigations ◽  
Native Point Defects

Effect of boron and nitrogen doping with native point defects on the vibrational properties of graphene

2014 ◽  
Vol 94 ◽  
pp. 35-43 ◽  
Author(s):  
Md. Sherajul Islam ◽  
Kenji Ushida ◽  
Satoru Tanaka ◽  
Takayuki Makino ◽  
Akihiro Hashimoto
Keyword(s):  
Point Defects ◽  
Nitrogen Doping ◽  
Vibrational Properties ◽  
Native Point Defects

A Model to Explain the Variations of “End-of-Range” Defect Densities with Ion Implantation Parameters

1992 ◽  
Vol 279 ◽  
Author(s):  
L. Laanab ◽  
C. Bergaud ◽  
M. M. Faye ◽  
J. Faure ◽  
A. Martinez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Computer Simulations ◽  
Point Defects ◽  
Numerical Optimization ◽  
Experimental Investigations ◽  
Shallow Junctions ◽  
Quantitative Explanation ◽  
Defect Densities

ABSTRACTComputer simulations in conjunction with TEM experiments have been used to test the different models usually adopted in the literature to explain the formation of “End Of Range”(EOR) defects which appear after annealing of preamorphized silicon layers. Only one survives careful experimental investigations involving Si+, Ge+, Sn+ amorphization at RT and LNT. The “excess-interstitial” model appears relevant at least for a semi-quantitative explanation of the source of point-defects which after recombination and agglomeration, lead to the formation of these defects. This model may be used for the numerical optimization of conditions for the production of high performances ullra-shallow junctions.

Stability and mobility of native point defects in AlH3

2011 ◽  
Vol 509 ◽  
pp. S658-S661 ◽  
Author(s):  
Lars Ismer ◽  
Anderson Janotti ◽  
Chris G. Van de Walle
Keyword(s):  
Point Defects ◽  
Native Point Defects

Hg1-xCdxTe: Defect Structure Overview

1990 ◽  
Vol 216 ◽  
Author(s):  
M.A. Berding ◽  
A. Sher ◽  
A.-B. Chen
Keyword(s):  
Point Defects ◽  
Defect Structure ◽  
Defect Formation ◽  
Activation Energies ◽  
Mass Action ◽  
Native Defect ◽  
Native Point Defects ◽  
Vacancy Migration ◽  
Formation Energies ◽  
Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Room Temperature ◽  
Vanadium Content ◽  
Mapping Technique ◽  
Native Defect ◽  
Room Temperature Photoluminescence ◽  
Native Point Defects ◽  
Pl Mapping ◽  
Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

Native point defects on hydrogen-passivated 4H–SiC (0001) surface and the effects on metal adsorptions

2017 ◽  
Vol 147 (2) ◽  
pp. 024707 ◽  
Author(s):  
Tingting Wang ◽  
Guiwu Liu ◽  
Yuanyuan Li ◽  
Haigang Hou ◽  
Ziwei Xu ◽  
...  
Keyword(s):  
Point Defects ◽  
Native Point Defects

scholarly journals Native point defects in few-layer phosphorene

2015 ◽  
Vol 91 (4) ◽  
Author(s):  
V. Wang ◽  
Y. Kawazoe ◽  
W. T. Geng
Keyword(s):  
Point Defects ◽  
Native Point Defects
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