scholarly journals Negligible Electronic Interaction between Photoexcited Electron–Hole Pairs and Free Electrons in Phosphorus–Boron Co-Doped Silicon Nanocrystals

2018 ◽  
Vol 122 (11) ◽  
pp. 6397-6404 ◽  
Author(s):  
Rens Limpens ◽  
Minoru Fujii ◽  
Nathan R. Neale ◽  
Tom Gregorkiewicz
Keyword(s):  
Silicon Nanocrystals ◽  
Electronic Interaction ◽  
Free Electrons ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Doped Silicon ◽  
Co Doped

Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers

2017 ◽  
Vol 178 ◽  
pp. 298-303 ◽  
Author(s):  
A. Mazurak ◽  
R. Mroczyński ◽  
J. Jasiński ◽  
D. Tanous ◽  
B. Majkusiak ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Silicon Nanocrystals ◽  
Thin Layers ◽  
Doped Silicon ◽  
Co Doped ◽  
Mis Structures

Surface Structure and Current Transport Property of Boron and Phosphorus Co-Doped Silicon Nanocrystals

2015 ◽  
Vol 120 (1) ◽  
pp. 195-200 ◽  
Author(s):  
Masato Sasaki ◽  
Shinya Kano ◽  
Hiroshi Sugimoto ◽  
Kenji Imakita ◽  
Minoru Fujii
Keyword(s):  
Surface Structure ◽  
Transport Property ◽  
Silicon Nanocrystals ◽  
Current Transport ◽  
Doped Silicon ◽  
Co Doped

Lightly boron and phosphorus co-doped silicon nanocrystals

2012 ◽  
Vol 14 (4) ◽  
Author(s):  
Yeshi Ma ◽  
Xiaobo Chen ◽  
Xiaodong Pi ◽  
Deren Yang
Keyword(s):  
Silicon Nanocrystals ◽  
Doped Silicon ◽  
Co Doped

scholarly journals Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

2020 ◽  
Vol 222 ◽  
pp. 217-239 ◽  
Author(s):  
Stefano Ossicini ◽  
Ivan Marri ◽  
Michele Amato ◽  
Maurizia Palummo ◽  
Enric Canadell ◽  
...  
Keyword(s):  
Ab Initio ◽  
Silicon Nanocrystals ◽  
Si Nanocrystals ◽  
Doped Silicon ◽  
Co Doped

Results from ab initio calculations for singly- and co- doped Si nanocrystals and nanowires are presented.

scholarly journals Modulating donor–acceptor transition energies in phosphorus–boron co-doped silicon nanocrystals via X- and L-type ligands

2020 ◽  
Vol 222 ◽  
pp. 201-216
Author(s):  
Gregory F. Pach ◽  
Gerard M. Carroll ◽  
Hanyu Zhang ◽  
Nathan R. Neale
Keyword(s):  
Ligand Binding ◽  
Silicon Nanocrystals ◽  
Donor Molecule ◽  
Transition Energies ◽  
Doped Silicon ◽  
Donor Acceptor ◽  
Co Doped

We explore the effect of ligand binding groups on the photoluminescent properties of phosphorus–boron co-doped silicon nanocrystals (PB:Si NCs) by exploiting X-type (covalent) and L-type (Lewis donor molecule) bonding interactions.

Photoluminescence from n-(p-) type impurity doped Si nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
Minoru Fujii ◽  
Atsushi Mimura ◽  
Shinji Hayashi ◽  
Dmitri Kovalev ◽  
Frederick Koch
Keyword(s):  
Free Electrons ◽  
Electron Hole ◽  
P Concentration ◽  
Si Nanocrystals ◽  
Donor And Acceptor ◽  
Impurity Doped ◽  
Pl Intensity ◽  
B Doping ◽  
Three Body ◽  
P Type

AbstractEffects of impurity (P and B) doping on the photoluminescence (PL) properties of Si nanocrystals (nc-Si) in SiO2 thin films are studied. It is shown that with increasing P concentration, PL intensity first increases and then decreases. In the P concentration range where PL intensity increases, quenching of the defect-related PL is observed, suggesting that dangling-bond defects are passivated by P doping. On the other hand, in the range where PL intensity decreases, optical absorptiondue to the intravalley transitions of free electrons generated by P doping appears. The generation of free electrons andthe resultant three-body Auger recombination of electron-hole pairs is considered to be responsible for theobserved PL quenching. In the case of B doping, the behavior is much different. With increasing B concentration, PL intensity decreases monotonously. By combining the results obtained for P and B doped samples, theeffects of donor and acceptor impurities on the PL properties of nc-Si are discussed.

Doped silicon nanocrystals from organic dopant precursor by a SiCl4-based high frequency nonthermal plasma

2014 ◽  
Vol 105 (18) ◽  
pp. 183110 ◽  
Author(s):  
Shu Zhou ◽  
Yi Ding ◽  
Xiaodong Pi ◽  
Tomohiro Nozaki
Keyword(s):  
High Frequency ◽  
Silicon Nanocrystals ◽  
Nonthermal Plasma ◽  
Doped Silicon ◽  
Dopant Precursor
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