HLE17: An Improved Local Exchange–Correlation Functional for Computing Semiconductor Band Gaps and Molecular Excitation Energies

2017 ◽  
Vol 121 (13) ◽  
pp. 7144-7154 ◽  
Author(s):  
Pragya Verma ◽  
Donald G. Truhlar
1972 ◽  
Vol 6 (12) ◽  
pp. 4367-4370 ◽  
Author(s):  
J. F. Janak ◽  
A. R. Williams ◽  
V. L. Moruzzi

Author(s):  
Olivia Long ◽  
Gopalakrishnan Sai Gautam ◽  
Emily Ann Carter

We benchmark calculated interlayer spacings, average topotactic voltages, thermodynamic stabilities, and band gaps in layered lithium transition-metal oxides (TMOs) and their de-lithiated counterparts, which are used in lithium-ion batteries as...


2019 ◽  
Vol 15 (9) ◽  
pp. 5069-5079 ◽  
Author(s):  
Pedro Borlido ◽  
Thorsten Aull ◽  
Ahmad W. Huran ◽  
Fabien Tran ◽  
Miguel A. L. Marques ◽  
...  

1971 ◽  
Vol 4 (14) ◽  
pp. 2064-2083 ◽  
Author(s):  
L Hedin ◽  
B I Lundqvist

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Maituo Yu ◽  
Shuyang Yang ◽  
Chunzhi Wu ◽  
Noa Marom

AbstractWithin density functional theory (DFT), adding a Hubbard U correction can mitigate some of the deficiencies of local and semi-local exchange-correlation functionals, while maintaining computational efficiency. However, the accuracy of DFT+U largely depends on the chosen Hubbard U values. We propose an approach to determining the optimal U parameters for a given material by machine learning. The Bayesian optimization (BO) algorithm is used with an objective function formulated to reproduce the band structures produced by more accurate hybrid functionals. This approach is demonstrated for transition metal oxides, europium chalcogenides, and narrow-gap semiconductors. The band structures obtained using the BO U values are in agreement with hybrid functional results. Additionally, comparison to the linear response (LR) approach to determining U demonstrates that the BO method is superior.


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