Bulk Heterojunction Organic Solar Cells with Graphene Oxide Hole Transport Layer: Effect of Varied Concentration on Photovoltaic Performance

2016 ◽  
Vol 121 (1) ◽  
pp. 140-146 ◽  
Author(s):  
Saqib Rafique ◽  
Shahino Mah Abdullah ◽  
Haya Alhummiany ◽  
M. Sh. Abdel-wahab ◽  
Javed Iqbal ◽  
...  
RSC Advances ◽  
2017 ◽  
Vol 7 (60) ◽  
pp. 37952-37958 ◽  
Author(s):  
Fei Cheng ◽  
Yiheng Wu ◽  
Yongcai Shen ◽  
Xueyuan Cai ◽  
Lingli Li

Efficient and stable poly(3-hexylthiophene) (P3HT):indene-C60 bisadduct (ICBA) based bulk-heterojunction (BHJ) organic solar cells (OSCs) with solution processed MoO3 (s-MoO3) as hole transport layer were fabricated.


2018 ◽  
Vol 59 ◽  
pp. 140-148 ◽  
Author(s):  
Saqib Rafique ◽  
Shahino Mah Abdullah ◽  
Javed Iqbal ◽  
Asim Jilani ◽  
Sajith Vattamkandathil ◽  
...  

2015 ◽  
Vol 3 (45) ◽  
pp. 11886-11892 ◽  
Author(s):  
Neeraj Chaudhary ◽  
Rajiv Chaudhary ◽  
J. P. Kesari ◽  
Asit Patra ◽  
Suresh Chand

Here, we report copper(i)thiocyanate (CuSCN) as an efficient and solution-processable hole transport layer (HTL) in bulk heterojunction solar cells.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1464
Author(s):  
Kwang Hyun Park ◽  
Sunggyeong Jung ◽  
Jungmo Kim ◽  
Byoung-Min Ko ◽  
Wang-Geun Shim ◽  
...  

The design of photoactive materials and interface engineering between organic/inorganic layers play a critical role in achieving enhanced performance in energy-harvesting devices. Two-dimensional transitional dichalcogenides (TMDs) with excellent optical and electronic properties are promising candidates in this regard. In this study, we demonstrate the fabrication of size-controlled MoS2 quantum dots (QDs) and present fundamental studies of their optical properties and their application as a hole-transport layer (HTL) in organic solar cells (OSCs). Optical and structural analyses reveal that the as-prepared MoS2 QDs show a fluorescence mechanism with respect to the quantum confinement effect and intrinsic/extrinsic states. Moreover, when incorporated into a photovoltaic device, the MoS2 QDs exhibit a significantly enhanced performance (5/10-nanometer QDs: 8.30%/7.80% for PTB7 and 10.40%/10.17% for PTB7-Th, respectively) compared to those of the reference device (7.24% for PTB7 and 9.49% for PTB7-Th). We confirm that the MoS2 QDs clearly offer enhanced transport characteristics ascribed to higher hole-mobility and smoother root mean square (Rq) as a hole-extraction material. This approach can enable significant advances and facilitate a new avenue for realizing high-performance optoelectronic devices.


2019 ◽  
Vol 66 ◽  
pp. 32-42 ◽  
Author(s):  
Saqib Rafique ◽  
Nur Adilah Roslan ◽  
Shahino Mah Abdullah ◽  
Lijie Li ◽  
Azzuliani Supangat ◽  
...  

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