Few-Layer Fe3(PO4)2·8H2O: Novel H-Bonded 2D Material and Its Abnormal Electronic Properties

2016 ◽  
Vol 120 (46) ◽  
pp. 26278-26283 ◽  
Author(s):  
Sibai Li ◽  
Ruge Quhe ◽  
Mouyi Weng ◽  
Yancong Feng ◽  
Yunxing Zuo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
2D Material

The unexpected effect of vacancies and wrinkling on the electronic properties of MoS2 layers

2019 ◽  
Vol 21 (44) ◽  
pp. 24731-24739 ◽  
Author(s):  
Fábio R. Negreiros ◽  
Germán J. Soldano ◽  
Sergio Fuentes ◽  
Trino Zepeda ◽  
Miguel José-Yacamán ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electronic Properties ◽  
Theoretical Approach ◽  
2D Material ◽  
Unexpected Effect

We report a combined experimental/theoretical approach to study the connection of S-vacancies and wrinkling on MoS2 layers, and how this feature produces significant changes in the electronic structure and reactivity of this 2D material.

On-surface synthesis of a 2D boroxine framework: a route to a novel 2D material?

2018 ◽  
Vol 54 (32) ◽  
pp. 3971-3973 ◽  
Author(s):  
Matus Stredansky ◽  
Alessandro Sala ◽  
Tommaso Fontanot ◽  
Roberto Costantini ◽  
Cristina Africh ◽  
...  
Keyword(s):  
Electronic Properties ◽  
2D Material

The synthesis of a 2D boroxine covalent framework is described, which exhibits promising morphological and electronic properties.

scholarly journals Borophene hydride: a stiff 2D material with high thermal conductivity and attractive optical and electronic properties

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3759-3768 ◽  
Author(s):  
Bohayra Mortazavi ◽  
Meysam Makaremi ◽  
Masoud Shahrokhi ◽  
Mostafa Raeisi ◽  
Chandra Veer Singh ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermal Conductivity ◽  
Electronic Properties ◽  
First Principles ◽  
High Thermal Conductivity ◽  
2D Material ◽  
Optical Responses ◽  
Optical And Electronic Properties

Mechanical properties, thermal conductivity, electronic and optical responses of borophene hydride, a newly synthesized 2D material are explored using the first-principles simulations.

The Study of a Structural and Electronic Properties of Two-Dimensional Flat Layer Arsenene Using Planewaves Density Functional Calculation

2020 ◽  
Vol 307 ◽  
pp. 45-50
Author(s):  
Ahmad Nazrul Rosli ◽  
Muhammad Mus'ab Anas ◽  
Halimatus Saadiah
Keyword(s):  
Electronic Properties ◽  
Electron Density ◽  
Density Functional ◽  
Single Layer ◽  
Electronic Band ◽  
Total Electron ◽  
2D Material ◽  
The Core ◽  
Flat Layer ◽  
Structural And Electronic Properties

We explore the structural and electronic properties of a single layer arsenene using the state of art, first principle approach from density functional theory (DFT). All the calculation was conducted using an open source DFT code, adopted the planewaves (PWs) method by Quantum Espresso (QE). The calculation utilized an exchange correlation potential of electron parametrized by Perdew-Burke-Ernzerhof (PBE) under generalized gradient approximation (GGA) functional scheme. Meanwhile, the pseudopotential assigned for the core electron is the projector typed augmented-wave with the core potential correction, generated using "atomic" code. All those parameters resulted an optimized structure of the honeycomb arsenene with lattice constant of 4.4971 Ǻ. The arsenene layer occupy a bond length value of 2.5964 Ǻ as measured between its neighbouring bonded atoms. From an optimized structure, we explore its electronic bandstructure plotted from 3 highly symmetries point for 2-dimensional (2D) material known as ‘’, ‘’ and ‘’ with 3 electron pathways. The total number of bands considered in bandstruture plotting is 10, where 5 bands will consider as valance bands while another 5 is conduction bands. The bandstructure shows that a single layer flat arsenene exhibits the characteristics of a conductor due to the overlapping of band near to Fermi level. Dirac cone were also noticed near to the Fermi energy level of the bandstructure. Lastly, we study the total electron density for the whole structure to reveal its bonding characteristics. The contour plot of electron densities between two bounded atoms displayed a pure covalent bond characteristic. The findings of this work is expected to contribute to the key of the electronic devices development, optoelectronics, and sensor devices based on 2D material technology.Keywords: flat layer arsenene, density of state, electron density, electronic band structure

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties

The electronic properties of a radical cation salt of bis-ethylenedioxodibenzofuran, [(bEDODBF)5 (AsF6)2(CH2Cl 2)0.2]

1988 ◽  
Vol 49 (4) ◽  
pp. 667-673 ◽  
Author(s):  
S. Söderholm ◽  
J. Hellberg ◽  
G. Ahlgren ◽  
M. Krebs ◽  
J.U. von Schütz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cation ◽  
Radical Cation Salt
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