Structure and Electronic Properties of a Continuous Random Network Model of an Amorphous Zeolitic Imidazolate Framework (a-ZIF)

2016 ◽  
Vol 120 (28) ◽  
pp. 15362-15368 ◽  
Author(s):  
Puja Adhikari ◽  
Mo Xiong ◽  
Neng Li ◽  
Xiujian Zhao ◽  
Paul Rulis ◽  
...  
1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.


1999 ◽  
Vol 59 (5) ◽  
pp. 3540-3550 ◽  
Author(s):  
Ming-Zhu Huang ◽  
Lizhi Ouyang ◽  
W. Y. Ching

1996 ◽  
Vol 228-231 ◽  
pp. 537-542 ◽  
Author(s):  
M.C. Jermy ◽  
G.N. Greaves ◽  
M.E. Smith ◽  
G. Bushnell-Wye ◽  
A.C. Hannon ◽  
...  

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Saito ◽  
Y. Yamakoshi ◽  
I. Ohdomari

ABSTRACTA structure of interface between crystalline Si (c-Si) and underlying SiO2 film formed by Si-on-Insulator technique has been analyzed by modeling of interface atomic arrangement. A ball-and-spoke model of a stoichiometrically abrupt c-Si/SiO2 interface has been constructed by connecting a (100) c-Si lattice and a continuous random network model of amorphous SiO2 . A Keating-type potential has been used for the interatomic interactions. The bond bending distortion energy of both Si and O atoms increases at the interface, while the bond stretching energy is negligibly small. The amount of interface energy due to bond distortion is 0.20J/m2.


1982 ◽  
Vol 14 ◽  
Author(s):  
D. K. Biegelsen

ABSTRACTIn this paper we argue that amorphous silicon can be treated as a relaxed continuous random network. The optical and electronic properties are controlled by localized gap states which arise from characteristic features of a disordered tetrahedrally-bonded covalent network. Experimental results are reviewed which indicate that the dominant (perhaps only) electrically-active defect in hydrogenated amorphous silicon is the topologically distinct, silicon dangling bond. Finally, we suggest that the same, disorder-related characteristics might also typify the electronic properties of some macroscopic crystalline silicon defects.


1998 ◽  
Vol 81 (22) ◽  
pp. 4899-4902 ◽  
Author(s):  
Yuhai Tu ◽  
J. Tersoff ◽  
G. Grinstein ◽  
David Vanderbilt

1974 ◽  
Vol 29 (5) ◽  
pp. 1201-1206 ◽  
Author(s):  
G. N. Greaves ◽  
E. A. Davis

Sign in / Sign up

Export Citation Format

Share Document