scholarly journals Nature of Cu Interstitials in Al2O3and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices

2016 ◽  
Vol 120 (27) ◽  
pp. 14474-14483 ◽  
Author(s):  
J. A. Dawson ◽  
J. Robertson
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Filament Formation ◽  
Access Memory ◽  
Conductive Bridge

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

2015 ◽  
Vol 36 (2) ◽  
pp. 129-131 ◽  
Author(s):  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Hongtao Liu ◽  
Tiancheng Gong ◽  
Guoming Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Single Filament ◽  
Low Resistance ◽  
Conductive Bridge ◽  
Resistance State

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

2013 ◽  
Vol 1562 ◽  
Author(s):  
Tong Liu ◽  
Yuhong Kang ◽  
Sarah El-Helw ◽  
Tanmay Potnis ◽  
Marius Orlowski
Keyword(s):  
Growth Rate ◽  
Radial Growth ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Conductive Bridge ◽  
Geometrical Form ◽  
Switching Memory

ABSTRACTA phenomenological model has been proposed for the radial growth of the copper or silver nanobridge in the conductive bridge random access memory devices. In this model, the growth rate of the bridge is proportional to the local ion flux based on the hopping mechanism. Due to the differences of the local electric field, the growth rate is different along a conical shape nanobridge. The model accounts for the growth rate difference by introducing a geometrical form factor. Based on the model, the top and bottom radii are predicted for truncated conical copper nanobridge. The model is validated with data obtained on Cu/TaOx/Pt resistive devices.

Atomistic mechanisms of copper filament formation and composition in Al2O3-based conductive bridge random access memory

2017 ◽  
Vol 122 (2) ◽  
pp. 024503 ◽  
Author(s):  
C. Nail ◽  
P. Blaise ◽  
G. Molas ◽  
M. Bernard ◽  
A. Roule ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Conductive Bridge

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge
Sign in / Sign up

Export Citation Format

Share Document