Benzoic Acid and Phthalic Acid on Atomically Well-Defined MgO(100) Thin Films: Adsorption, Interface Reaction, and Thin Film Growth

2015 ◽  
Vol 119 (48) ◽  
pp. 26968-26979 ◽  
Author(s):  
Tao Xu ◽  
Susanne Mohr ◽  
Max Amende ◽  
Mathias Laurin ◽  
Tibor Döpper ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Benzoic Acid ◽  
Phthalic Acid ◽  
Film Growth ◽  
Interface Reaction ◽  
Thin Film Growth

scholarly journals Orientation transitions during the growth of imine covalent organic framework thin films

2017 ◽  
Vol 5 (21) ◽  
pp. 5090-5095 ◽  
Author(s):  
H. Wang ◽  
B. He ◽  
F. Liu ◽  
C. Stevens ◽  
M. A. Brady ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Experimental Observation ◽  
Growth Kinetic ◽  
Film Growth ◽  
Nucleation And Growth ◽  
Thin Film Growth ◽  
Covalent Organic Framework ◽  
Kinetic Processes ◽  
Organic Framework

The first experimental observation of a rare re-entrant transition during COF thin film growth reveals independent nucleation and growth kinetic processes.

Surfactant-Mediated Epitaxial Growth of Metallic Thin Films

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Mode ◽  
Metallic Thin Films ◽  
Layer By Layer ◽  
Metallic Films ◽  
Heteroepitaxial Growth

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

EFFECT OF ENERGETIC ION BOMBARDMENT DURING THE GROWTH OF HYDROGENATED AMORPHOUS CARBON THIN FILMS

2015 ◽  
Vol 7 (2) ◽  
pp. 1823-1828
Author(s):  
Asim Aijaz ◽  
Zaheer Uddin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Carbon ◽  
Film Growth ◽  
Ion Bombardment ◽  
High Density ◽  
Thin Film Growth ◽  
Buffer Gas ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

Hydrogenated amorphous carbon (a-C:H) thin film growth using plasma-assisted deposition is studied using Monte Carlo based simulation. The effect of energetic bombardment of the ionized depositing species as well as ionized buffer gas species on the film growth and the resulting film properties is investigated. The ion energies that assist the a-C:H film growth from low density structures to high density structures such as diamond-like carbon (DLC) are used and the effect of energy and composition of the depositing species on the C-C and C-H bonding and the film structure are analyzed. It is found that the ion bombardment favors the formation of a-C:H films with low H contents, high density and superior mechanical strength of the resulting thin films and is therefore an effective way to tailor-made a-C:H thin film growth for specific applications.

Electrodeposition of lithium phthalocyanine thin films: Part I. Structure and morphology

1999 ◽  
Vol 14 (5) ◽  
pp. 2162-2172 ◽  
Author(s):  
M. Brinkmann ◽  
S. Graff ◽  
C. Chaumont ◽  
J-J. André
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxidation Potential ◽  
Thin Film Growth ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Film Synthesis

A new thin film synthesis route based on the electrochemical oxidation of PcLi2 and deposition of lithium phthalocyanine (PcLi) onto indium tin oxide (ITO) substrate is demonstrated. The effects on the thin film morphology of various parameters such as the electrolysis time, the nature of the solvent, and the oxidation potential are investigated. The thin film growth is studied via x-ray diffraction, potential step experiments, and ex situ scanning electron microscopy. Various morphologies of the x-form thin films are observed for different electrolysis times and solvents. Thin films grown in acetonitrile of thickness above 1 μm consist in unidirectionally oriented needle-shaped crystallites.

Thin Film Growth using Ablation of Ceramics with a Lina-Spark™ Atomizer

1998 ◽  
Vol 526 ◽  
Author(s):  
R. Hourlet ◽  
R. Vacassy ◽  
H. Hofmann ◽  
W. Vogel
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Film Growth ◽  
Thin Film Growth ◽  
Ceramic Specimen ◽  
Ultrasonic Nebulization ◽  
Laser Spark ◽  
Powder Particles ◽  
Full Benefit

AbstractA laser spark atomizer (LINA-SPARK™), LSA, has been used for preparing powder particles from SnO2, Al2O3 and ZrO2 ceramic specimen. It is shown that this technique can be used for preparing thin films by direct deposition on a substrate. The as-prepared powder can also be redispersed and deposited using ultrasonic nebulization (Pyrosol) deposition. The latter approach is especially suited for deposition of controlled-size and multicomponent thin films.The coupling of the LSA to an induced coupled plasma (ICP) emission spectrometer is also discussed and compared with laser ablation. Generally powder particles produced from LSA present a narrower size distribution as powders prepared by laser ablation. As a result, the quantitative elemental analysis of solids are improved with full benefit of the sensitivity and detection limits of the ICP are lowered.

A Study on the Computer Simulation for the Fractal Growth of Semiconductor Thin Films

2013 ◽  
Vol 311 ◽  
pp. 451-455
Author(s):  
Liang Wen Ji ◽  
Mei Li Tsai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Computer Simulation ◽  
Film Growth ◽  
Fractal Theory ◽  
Three Dimensional ◽  
Thin Film Growth ◽  
Physical Parameters ◽  
Traditional Theory ◽  
Semiconductor Thin Films

This paper is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this paper can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.

scholarly journals Thin film growth of MAX phases as functional materials

2021 ◽  
Author(s):  
Abhijit Biswas ◽  
Varun Natu ◽  
Anand B Puthirath
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Growth ◽  
Functional Materials ◽  
Thin Film Growth ◽  
Max Phase ◽  
Synthesis Methods ◽  
High Quality ◽  
Max Phases ◽  
Wide Range

Abstract Layered nanolaminate ternary carbides, nitrides and carbonitrides with general formula Mn+1 AXn or MAX (n = 1, 2, or 3, M is an early transition metal, A is mostly group 13 or 14 element, and X is C and/or N) has revolutionized the world of nanomaterials, due to the coexistence of both ceramic and metallic nature, giving rise to exceptional mechanical, thermal, electrical, chemical properties and wide range of applications. Although several solid-state bulk synthesis methods have been developed to produce a variety of MAX phases, however, for certain applications, the growth of MAX phases, especially in its high-quality epitaxial thin films form is of increasing interest. Here, we summarize the progress made thus far in epitaxial growth and property evaluation of MAX phase thin films grown by various deposition techniques. We also address the important future research directions to be made in terms of thin-film growth. Overall, in the future, high-quality single-phase epitaxial thin film growth and engineering of chemically diverse MAX phases may open up interesting new avenues for next-generation technology.

Real Time Ellipsometric Study of Boron Nitride Thin Film Growth

1995 ◽  
Vol 410 ◽  
Author(s):  
E. Bertran ◽  
A. Canillas ◽  
J. Campmany ◽  
M. El Kasmi ◽  
E. Pascual ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Boron Nitride ◽  
Real Time ◽  
Film Growth ◽  
Thin Film Growth ◽  
Si Substrates ◽  
Rf Glow Discharge

ABSTRACTWe present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PECVD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on Ni-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trayectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. We applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sofisticated model considering a variable refractive index could better describe these films.

Nanostructural Evolution in Non-epitaxial Growth of Thin Films

2006 ◽  
Vol 961 ◽  
Author(s):  
Minghui Hu ◽  
Suguru Noda ◽  
Hiroshi Komiyama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Control ◽  
Large Scale ◽  
Film Growth ◽  
Thin Film Growth ◽  
Initial Growth ◽  
Epitaxial Thin Films ◽  
Energy Applications ◽  
Unit Structure

ABSTRACTThe initial growth of non-epitaxial thin films was studied and discussed using the concept that thermodynamics controls the unit-structure within the surface diffusion length of deposits, whereas kinetics controls the ensemble-structure on a large scale. Three basic topics, growth mode (island shape), crystalline (island inner) structure, time-dependent properties of island ensemble (island size, distance, and density), are summarized based on the investigation of thin film growth of metals on TiO2, Cu on SiO2 and Ti/SiO2. This study provides fundamental understanding of structural control during thin film growth, and further can be applied to various advanced devices for electronics, photonics, catalysis, and energy applications.

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