First-Principles Study of Lithiation of Type I Ba-Doped Silicon Clathrates

2015 ◽  
Vol 119 (51) ◽  
pp. 28247-28257 ◽  
Author(s):  
Xihong Peng ◽  
Qun Wei ◽  
Ying Li ◽  
Candace K. Chan
1997 ◽  
Vol 482 ◽  
Author(s):  
J. A. Majewski ◽  
M. Städele

AbstractWe present a first-principles study of heteroepitaxial interfaces between GaN and both cubic as well as wurtzite AlN substrates oriented along main cubic or hexagonal directions and of stacking fault interfaces between cubic and wurtzite GaN. Our calculations show that all studied heterostructures are of type I. Valence band offsets for GaN/AlN are nearly independent of the substrate orientation and of the order of 0.8 eV. The valence and conduction band offsets for a stacking fault interface are predicted to be 40 meV and 175 meV, respectively.


2011 ◽  
Vol 60 (12) ◽  
pp. 127302
Author(s):  
Wang Ying-Long ◽  
Wang Xiu-Li ◽  
Liang Wei-Hua ◽  
Guo Jian-Xin ◽  
Ding Xue-Cheng ◽  
...  

2008 ◽  
Vol 42 (1) ◽  
pp. 161-167 ◽  
Author(s):  
Run Long ◽  
Ying Dai ◽  
Baibiao Huang ◽  
Xueqin Sun

2009 ◽  
Vol 58 (7) ◽  
pp. 4883
Author(s):  
Song Jiu-Xu ◽  
Yang Yin-Tang ◽  
Liu Hong-Xia ◽  
Zhang Zhi-Yong

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