Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3ON–VAl Surface Defects

2015 ◽  
Vol 119 (37) ◽  
pp. 21688-21693 ◽  
Author(s):  
Yi-min Ding ◽  
Jun-jie Shi ◽  
Min Zhang ◽  
Xin-he Jiang ◽  
Hong-xia Zhong ◽  
...  
Keyword(s):  
Luminescence Band ◽  
Surface Defects ◽  
Blue Luminescence ◽  
Blue Luminescence Band

Origin of the blue luminescence band in zirconium oxide

2015 ◽  
Vol 57 (7) ◽  
pp. 1347-1351 ◽  
Author(s):  
D. V. Gulyaev ◽  
T. V. Perevalov ◽  
V. Sh. Aliev ◽  
K. S. Zhuravlev ◽  
V. A. Gritsenko ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Luminescence Band ◽  
Blue Luminescence ◽  
Blue Luminescence Band

scholarly journals Surface ZnSe:Ca layers with hole conductivity

2019 ◽  
pp. 31-35
Author(s):  
V. P. Makhniy ◽  
M. M. Berezovskiy ◽  
O. V. Kinzerska ◽  
V. V. Melnyk
Keyword(s):  
Zinc Selenide ◽  
Emission Band ◽  
Luminescence Band ◽  
Luminescent Properties ◽  
Low Energy ◽  
Blue Luminescence ◽  
Hole Conductivity ◽  
Pure Zinc ◽  
Ca Doping ◽  
Blue Luminescence Band

The authors investigate the effect of treating n-ZnSe substrates with boiling aqueous Ca(NO3)2 suspension on their electrical and luminescent properties. Base substrates were cut from bulk pure zinc selenide crystals grown from a stoichiometric melt by the Bridgman method. It was found that the Ca-doping of the substrates causes an almost complete “quenching” of the low-energy orange emission band with a maximum near ħωmax ≈ 1,95 eV and a significant increase in the efficiency of the edge blue luminescence band.

The origin of 2.7 eV blue luminescence band in zirconium oxide

2014 ◽  
Vol 116 (24) ◽  
pp. 244109 ◽  
Author(s):  
T. V. Perevalov ◽  
D. V. Gulyaev ◽  
V. S. Aliev ◽  
K. S. Zhuravlev ◽  
V. A. Gritsenko ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Luminescence Band ◽  
Blue Luminescence ◽  
Blue Luminescence Band

Hydrogen-carbon complexes and the blue luminescence band in GaN

2016 ◽  
Vol 119 (3) ◽  
pp. 035702 ◽  
Author(s):  
D. O. Demchenko ◽  
I. C. Diallo ◽  
M. A. Reshchikov
Keyword(s):  
Luminescence Band ◽  
Blue Luminescence ◽  
Blue Luminescence Band

A VERSATILE APPROACH FOR THE SYNTHESIS OF ALUMINUM OXIDE NANORODS BASED ON A SIMPLE REACTION

2009 ◽  
Vol 23 (13) ◽  
pp. 1723-1729 ◽  
Author(s):  
M. A. SHAH
Keyword(s):  
Aluminum Oxide ◽  
Luminescence Band ◽  
Large Scale ◽  
Scale Production ◽  
Simple Reaction ◽  
Large Scale Production ◽  
Oxide Nanorods ◽  
Plausible Mechanism ◽  
Blue Luminescence Band ◽  
Two Peaks

Aluminum oxide (α -Al 2 O 3) nanorods have been successfully synthesized by a simple reaction of aluminum powder with water without any additives/organics at 100°C. This is the first report for the synthesis of aluminum oxide nanorods where water has been used as solvent as well as a source of oxygen. The diameters of nanorods are relatively uniform, ranging from 40–60 nm with length of several micrometers. A plausible mechanism is proposed for the formation of these nanorods and is expected that this synthetic technique can be extended to obtain other metal oxides. Photoluminescence measurements reveal a blue luminescence band with two peaks at 310 and 420 nm, which could be attributed to F + centers. The reported method is new, economical, fast and free of pollution, which will make it suitable for large scale production.

The origin of luminescence from di[4-(4-diphenylaminophenyl)phenyl]sulfone (DAPSF), a blue light emitter: an X-ray excited optical luminescence (XEOL) and X-ray absorption near edge structure (XANES) study

2016 ◽  
Vol 18 (9) ◽  
pp. 6406-6410 ◽  
Author(s):  
Duo Zhang ◽  
Hui Zhang ◽  
Xiaohong Zhang ◽  
Tsun-Kong Sham ◽  
Yongfeng Hu ◽  
...  
Keyword(s):  
Blue Light ◽  
Luminescence Band ◽  
Functional Group ◽  
Edge Structure ◽  
X Ray ◽  
Light Emitter ◽  
Phenyl Sulfone ◽  
Optical Luminescence ◽  
Blue Luminescence Band ◽  
X Ray Absorption

The blue luminescence band of DAPSF is primarily associated with the sulfur functional group.

Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching

2011 ◽  
Vol 1396 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Retsuo Kawakami ◽  
Masahito Niibe ◽  
Atsushi Takeichi ◽  
Takeshi Inaoka ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Luminescence Band ◽  
Shallow Donor ◽  
Acceptor Pair ◽  
Near Surface ◽  
Photoluminescence Study ◽  
Damage Characteristics ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Blue Luminescence Band

ABSTRACTWe investigated, by employing a photoluminescence technique, the etching damage introduced in near-surface regions of GaN by Ar and Kr plasmas and clarified the differences between the damage characteristics of these regions for the two plasma etching cases. For Ar plasma, the shallow donor-acceptor pair emission at ~3.28 eV was significantly weakened; additionally, a broad blue luminescence band arose at approximately ~3.0 eV. In contrast, for Kr plasma under high gas pressure, we found the recovery of the damage to the same level as the as-grown crystallinity. These differences in the damage characteristics for the two plasma etching cases probably depend upon which atom (N or Ga) is preferentially etched in these cases.

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

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