Size-Dependent Optical Properties of Luminescent Zn3P2 Quantum Dots

2015 ◽  
Vol 119 (19) ◽  
pp. 10576-10584 ◽  
Author(s):  
Minh Q. Ho ◽  
Richard J Alan Esteves ◽  
Gotluru Kedarnath ◽  
Indika U. Arachchige
2015 ◽  
Vol 242 ◽  
pp. 383-390
Author(s):  
Md Hosnay Mobarok ◽  
Tapas K. Purkait ◽  
Jonathan G.C. Veinot

The preparation and surface chemistry Si quantum dots (SiQDs) are currently an intense focus of research because of their size dependent optical properties and many potential applications. SiQDs offer several advantages over other quantum dots; Si is earth abundant, non-toxic and biocompatible. This account briefly highlights recent advancements made by our research group related to the synthesis, functionalization, surface dependent optical properties and applications of SiQDs.


Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.


2012 ◽  
Vol 116 (8) ◽  
pp. 5049-5054 ◽  
Author(s):  
John Sundar Kamal ◽  
Abdoulghafar Omari ◽  
Karen Van Hoecke ◽  
Qiang Zhao ◽  
André Vantomme ◽  
...  

2018 ◽  
Vol 52 (9) ◽  
pp. 1137-1144 ◽  
Author(s):  
T. S. Kondratenko ◽  
M. S. Smirnov ◽  
O. V. Ovchinnikov ◽  
E. V. Shabunya-Klyachkovskaya ◽  
A. S. Matsukovich ◽  
...  

2008 ◽  
Vol 17 (4) ◽  
pp. 1280-1285 ◽  
Author(s):  
Ma Hong ◽  
Ma Guo-Hong ◽  
Wang Wen-Jun ◽  
Gao Xue-Xi ◽  
Ma Hong-Liang

ACS Nano ◽  
2009 ◽  
Vol 3 (10) ◽  
pp. 3023-3030 ◽  
Author(s):  
Iwan Moreels ◽  
Karel Lambert ◽  
Dries Smeets ◽  
David De Muynck ◽  
Tom Nollet ◽  
...  

2000 ◽  
Vol 636 ◽  
Author(s):  
R.W. Meulenberg ◽  
H.W. Offen ◽  
G.F. Strouse

AbstractSeveral studies to date have probed structural phase transitions in quantum dots (QDs) at high pressure. At low pressure (< 1 GPa), the optical properties of solvated nanomaterials are modulated by pressure induced electronic level tuning, particularly for surface and trap states. In fact, low pressure studies on solvated CdSe QDs may provide insight into the participation of surface hole traps and electron traps on the excited state optical properties in these materials. We report findings of QD size dependent pressure coefficients and postulate that trap state tuning, surface reconstruction events, and electron-hole exchange interactions may play a role in the low-pressure regime.


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