Enhanced Absorption in the Wide Wavelength Range: Black Silicon Decorated with Few-Layer PtS2

2021 ◽  
Author(s):  
Jiangwei Lu ◽  
Wenbo Zhuang ◽  
Wangfan Yang ◽  
Xudong Zhang ◽  
Guowen Su ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Black Silicon ◽  
Enhanced Absorption ◽  
Wide Wavelength Range

Quarter-wave plate tunable in a wide wavelength range

1995 ◽  
Vol 25 (2) ◽  
pp. 187-190 ◽  
Author(s):  
I V Gol'tser ◽  
M Ya Darsht ◽  
Boris Ya Zel'dovich ◽  
N D Kundikova ◽  
L F Rogacheva
Keyword(s):  
Wavelength Range ◽  
Quarter Wave Plate ◽  
Wave Plate ◽  
Wide Wavelength Range ◽  
Quarter Wave

Wide-wavelength range AlGaInAs laser array achieved by selective area growth on heterogenerous InP-on-Si wafer

2021 ◽  
Author(s):  
Claire Besancon ◽  
Delphine Néel ◽  
Giancarlo Cerulo ◽  
Dalila Make ◽  
Nicolas I. Vaissiere ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Selective Area Growth ◽  
Laser Array ◽  
Selective Area ◽  
Wide Wavelength Range ◽  
Area Growth ◽  
Si Wafer

scholarly journals Nanowire photonics toward wide wavelength range and subwavelength confinement [Invited]

2020 ◽  
Vol 10 (10) ◽  
pp. 2560 ◽  
Author(s):  
Masaya Notomi ◽  
Masato Takiguchi ◽  
Sylvain Sergent ◽  
Guoqiang Zhang ◽  
Hisashi Sumikura
Keyword(s):  
Wavelength Range ◽  
Wide Wavelength Range

Synergistic enhancing photoelectrochemical response of Bi10O6S9 with WO3 optical heterojunction in wide wavelength range

2020 ◽  
Vol 509 ◽  
pp. 144697 ◽  
Author(s):  
Changchang Shi ◽  
Xiaowen Zhou ◽  
Wanqing Li ◽  
Hongmei Guo ◽  
Yanjie Zhao ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Photoelectrochemical Response ◽  
Wide Wavelength Range

scholarly journals Faint Galaxy Number-Counts

1996 ◽  
Vol 171 ◽  
pp. 225-228
Author(s):  
N. Metcalfe ◽  
T. Shanks ◽  
R. Fong ◽  
J. Gardner ◽  
N. Roche
Keyword(s):  
Wavelength Range ◽  
Evolutionary History ◽  
Statistical Properties ◽  
Normal Galaxies ◽  
Number Magnitude ◽  
Faint Galaxy ◽  
Wide Wavelength Range ◽  
History Of ◽  
Number Counts ◽  
Additional Constraints

Observers studying the cosmology and evolutionary history of our Universe through the statistical properties of ‘normal’ galaxies have four main tools at their disposal. (1) The number-redshift relation. Although a very powerful diagnostic, spectroscopic surveys are currently limited to B < 24m and significantly incomplete in the range, 23m< B < 24m. (2) Galaxy number-magnitude counts. Although by themselves, they cannot constrain models as tightly as spectroscopy, they can be measured ∼ 4m fainter, where cosmological effects are expected to be significant. (3) Galaxy colours over a wide wavelength range, which provide additional constraints. (4) The dependence of galaxy clustering with magnitude. ω(θ) can be measured to the limit of the counts.Here we report on the latest Durham count and clustering work.

Chiral 2D Organic Inorganic Hybrid Perovskite with Circular Dichroism Tunable Over Wide Wavelength Range

2020 ◽  
Vol 142 (9) ◽  
pp. 4206-4212 ◽  
Author(s):  
Jihoon Ahn ◽  
Sunihl Ma ◽  
Ji-Young Kim ◽  
Jihoon Kyhm ◽  
Wooseok Yang ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Wavelength Range ◽  
Inorganic Hybrid ◽  
Hybrid Perovskite ◽  
Wide Wavelength Range ◽  
Circular Dichroïsm

Infrared Light Absorption and Emissivity of Silicon Microstructured by Femtosecond Laser in SF6

2011 ◽  
Vol 287-290 ◽  
pp. 364-368 ◽  
Author(s):  
Yuan Li ◽  
Guo Jin Feng ◽  
Li Zhao
Keyword(s):  
Femtosecond Laser ◽  
Wavelength Range ◽  
Light Absorption ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Infrared Light ◽  
Structure Defects ◽  
Wide Wavelength Range ◽  
Different Temperatures ◽  
Tentative Explanation

The surface microstructured silicon prepared by femtosecond laser pulses irradiation in SF6shows significantly enhanced light absorption over a wide wavelength range. Absorptance of microstructured silicon is measured from 2 to 16μm, and the absorptance can up to 0.8 in the measured wavelength range. The absorptance of microstructured silicon increases as the height of spikes increases. Emissivity of microstructured silicon at different temperatures(100°C-400°C) is measured from 2.5μm to 25μm. Greatly enhanced emissivity compared to that of flat silicon was observed. At a certain temperature, with increasing the height of the spikes, the emissivity increases. For a sample with 13–14μm high spikes, the emissivity at a temperature of 100°C is approximately 0.96. A tentative explanation for the high absorptance of microstructured silicon has been carried out from three aspects: impurity states, structure defects and multiple reflection of light between spikes. The excellent properties of microstructured silicon make it a promising candidate for applications of infrared detectors, silicon solar cells, flat blackbody source and so on.

Sign in / Sign up

Export Citation Format

Share Document